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    Highly Flexible Tribovoltaic Nanogenerator Based-on P-N Junction Interface: Comparative Study on Output Dependency Dominated by Photovoltaic Effect in Freestanding-Mode
    (2023-10-18)
    Sriphan, Saichon
    ;
    Worathat, Supakarn
    ;
    Pharino, Utchawadee
    ;
    Chanlek, Narong
    ;
    Pakawanit, Phakkhananan
    The emergence of tribovoltaic nanogenerators (TVNGs) paves the way for developing a new kind of semiconductor-based energy harvester that overcomes the restriction of low output current in a conventional approach. The traditional TVNG generally depends on the frictional pair between two rigid semiconductors (or metal-semiconductor), limiting the practicability of flexible and portable electronics. Recent developments require the fundamental understanding of charge generation in diverse operating modes and structures. Here, a flexible TVNG based on the p-Cu<inf>2</inf>O/n-g-C<inf>3</inf>N<inf>4</inf> interface is presented. Operating in a freestanding mode, the proposed TVNG can generate a stable signal in any optical conditions including UV illumination, dark, and ambient. Under UV illumination, the electrical outputs of the TVNG reach 0.43 V and 2.1 µA cm<sup>−2</sup>, which are significantly larger than those obtained from dark and ambient conditions. The results demonstrate the coupling effect of three phenomena: tribovoltaic, photovoltaic, and triboelectric effects, and the unique mechanism to the observed signal is proposed. Additionally, the TVNG shows the practical feasibility of energy harvesting with capacitor charging and charge-boosting circuits. This study showcases the unique concept with potential for developing a novel flexible nanogenerator in many aspects, including material, structure, and fundamental mechanism.
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    Defect distribution and yield analysis technique on silicon wafer
    (2014-01-01)
    Praepattarapisut, Warakorn
    ;
    Pengchan, Weera
    ;
    Phetchakul, Toempong
    ;
    Poyai, Amporn
    This paper presents the defect distribution and yield analysis on silicon wafer. The generation and recombination lifetime were the key parameters and obtained from the current- voltage and the capacitance-voltage of diode characteristics for forward bias. Then 3D contour maps were plotted as defect distribution and can be analyzed for the whole wafer which is useful for the yield analysis of the defects that were caused from fabrication process. © (2014) Trans Tech Publications, Switzerland.
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    Improved extraction of the local carrier generation lifetime from forward diode characteristics
    (2012-01-01)
    Pengchan, Weera
    ;
    Phetchakul, Toempong
    ;
    Poyai, Amporn
    This paper is proposed to extract the local carrier generation lifetime from forward current-voltage (I-V) characteristics of p-n junctions in case of non-uniform defects. The different geometry p-n junctions have been fabricated by a standard CMOS technology. The forward I-V and high frequency capacitance-voltage (C-V) characteristics of p-n junctions have been measured. The recombination current density can be extracted from the area forward current density by subtracting with the area diffusion current density. Form the recombination current density, the local generation and recombination lifetime can be obtained.