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Improved extraction of the local carrier generation lifetime from forward diode characteristics
Author(s)
Date Issued
January 1, 2012
Type
Conference Paper
Abstract
This paper is proposed to extract the local carrier generation lifetime from forward current-voltage (I-V) characteristics of p-n junctions in case of non-uniform defects. The different geometry p-n junctions have been fabricated by a standard CMOS technology. The forward I-V and high frequency capacitance-voltage (C-V) characteristics of p-n junctions have been measured. The recombination current density can be extracted from the area forward current density by subtracting with the area diffusion current density. Form the recombination current density, the local generation and recombination lifetime can be obtained.
Citation
Advanced Materials Research, 378-379, 593-596, 2012