Wongprasert, Yothin

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Wongprasert, Yothin
Alternative Name
Wongprasert, Y.
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Email
yothin.wo@kmitl.ac.th

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    18650 Battery Real Time Output Resistance Test
    (2020-04-01)
    Parnklang, Jirawath
    ;
    Seabgsai, Tharnatip
    ;
    Yongyutwichai, Kongpak
    ;
    Wongprasert, Yothin
    Designing the output resistance testing machine of popular 18650 battery while the battery supply current to the system. This tool consist of important parts which are microcontroller, used to generate control signal and process the battery voltage and current, power MOSFET and its driver circuit, battery current and voltage sense circuit. We connect the create tool with a system that used a 18650 battery pack supply. The microcontroller sent the control appropriate pulse signal from MOSFET threshold voltage level the maximum to the MOSFET driver circuit to divide some smallest current form the system. Testing the difference current form real time battery load current and test the minimum different battery voltage continuously. The voltage range that the system can test is 3.2(1ow battery single cell) to 42 (10 series cell) volts with 976 volt resolution. And also the testing current range is 0 to 10 ampere with 2.4 milliamp (mA)resolutions. The real time output resistance of the battery display form 0 milliohm (m) to 1000.00 ohm maximum value. This tool can alert the user that 18650 batteries is deteriorating.
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    Gamma-radiation Induced Degradation of the Electrical Characteristics of NMOSFETs
    (2022-01-01)
    Ruangphait, Anucha
    ;
    Kerdpradist, Amonrat
    ;
    Muanghlua, Rangson
    ;
    Wongprasert, Yothin
    In this paper, we present the gamma-radiation induced degradation of the electrical characteristics of N-channel Metal Oxide Semiconductor Field Effect Transistors (NMOSFETs). The exposure was done with a<sup>60</sup>Co gamma-ray source over the total dose range of 1 kGy to 10 kGy, with a dose rate of 3.9 kGyhr. The effects of irradiation induced degradation on device parameters such as threshold voltage, low field mobility, device transconductance (G<inf>m</inf>), saturation drain current, off state leakage current and subthreshold swing were investigated. The threshold voltage was determined using the linear extrapolation method. The device dimensions with Wide/ Long channel that excluded the Narrow Channel Effect (NCE) and the Short Channel Effect (SCE) were measured. The results showed that the threshold voltage, device transconductance and low field mobility decreased but the saturation drain current, off state leakage current and subthreshold swing increased as the gamma irradiation increased. Finally, the macro parameter models were investigated and discussed.
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    Effect and Determination of Oxide Trapped Charge and Interface Trapped Charge Density of Threshold Voltage Shift in Irradiated MOSFET by Subthreshold Methodology
    (2023-10-01)
    Ruangphanit, Anucha
    ;
    Muanghlua, Rangson
    ;
    Wongprasert, Yothin
    This paper presents the effects and determination of oxide and interface trapped charge density of threshold voltage shift in irradiated MOSFET by subthreshold methodology. The designed dimension, channel width per channel length (W/L) is 20 µm/20 µm. The threshold voltage is extracted by a linear extrapolation methodology. The over all threshold voltage shifts are caused by oxide trapped charge and interface trapped charge. The subthreshold methodology determines the interface trapped charge. The<sup>60</sup>Co gamma-ray source was used for irradiation to a total dose of 10 kGy. The results showed that the threshold voltage shift is approximately-24 mV/kGy for NMOS and-27 mV/kGy for PMOS. The subthreshold swing shift is approximately 1.2 mV/dec.kGy for NMOS and 0.9 mV/dec.kGy for PMOS. The oxide trapped charge density N<inf>OT</inf> and interface trapped charge density N<inf>IT</inf> are found to be increased in NMOS and PMOS respectively. The ratio of ΔN<inf>OT</inf>/ΔN<inf>IT</inf> was approximately 2.2 times for NMOS and 2.8 times. Due to the structure, the channel of NMOS is a surface channel whereas the channel of PMOS is a buried channel. Finally, the effect of gamma irradiation on the PMOS was greater than the effect on NMOS observed from the change in threshold voltage and the ratio of ΔN<inf>OT</inf>/ΔN<inf>IT.</inf>.