Wongprasert, Yothin
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Preferred name
Wongprasert, Yothin
Alternative Name
Wongprasert, Y.
Main Affiliation
Email
yothin.wo@kmitl.ac.th
5 results
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Item type:Publication, Rapid synthesis of potassium sodium niobate (K 1/2Na 1/ 2NbO3) lead-free piezoelectric powder using the combustion method(2013-12-01); ; ; Potassium sodium niobate (K1/<inf>2</inf>Na1/<inf>2</inf>NbO<inf>3</inf>) powder was synthesized successfully by the combustion synthesis. The raw materials of KNO<inf>3</inf>, NaNO<inf>3</inf> and Nb<inf>2</inf>O<inf>5</inf> were used with glycine as fuel. The thermal behaviour of the precursor was determined using thermo gravimetric analysis (TGA) and derivative thermo gravimetric (DTG) analysis. The conditions for preparing perovskite phase formation, influence of the fuel-to-oxidizer molar ratio, and crystal structure were characterized by the X-ray diffraction technique (XRD) and Fourier transform infrared (FTIR) spectroscopy. The morphology and particle size were investigated through a scanning electron microscope (SEM). © 2013 Copyright Taylor and Francis Group, LLC. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Gamma-radiation Induced Degradation of the Electrical Characteristics of NMOSFETs(2022-01-01); In this paper, we present the gamma-radiation induced degradation of the electrical characteristics of N-channel Metal Oxide Semiconductor Field Effect Transistors (NMOSFETs). The exposure was done with a<sup>60</sup>Co gamma-ray source over the total dose range of 1 kGy to 10 kGy, with a dose rate of 3.9 kGyhr. The effects of irradiation induced degradation on device parameters such as threshold voltage, low field mobility, device transconductance (G<inf>m</inf>), saturation drain current, off state leakage current and subthreshold swing were investigated. The threshold voltage was determined using the linear extrapolation method. The device dimensions with Wide/ Long channel that excluded the Narrow Channel Effect (NCE) and the Short Channel Effect (SCE) were measured. The results showed that the threshold voltage, device transconductance and low field mobility decreased but the saturation drain current, off state leakage current and subthreshold swing increased as the gamma irradiation increased. Finally, the macro parameter models were investigated and discussed. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Optical-beam profiling by field-controlled metal-semiconductor-metal structures(2005-10-01); Titiroongruang, W.Optical-beam profiling properties of Schottky-barrier metal-semiconductor- metal (MSM) structures have been investigated experimentally. Making use of a planar molybdenum/n-type silicon/molybdenum (Mo/n-Si/Mo) MSM structure with a wide electrode separation, one-dimensional (1-D) profiling of optical-beam intensity distribution from a helium-neon (He-Ne) laser was carried out. It was confirmed that, in addition to the existing photosensing function, the sensitivity (output photocurrent) of such a structure could be controlled by applying a bias via lateral spreading of the surface space-charge-region (SCR) at the side of the reverse-biased Schottky-junction. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Effect and Determination of Oxide Trapped Charge and Interface Trapped Charge Density of Threshold Voltage Shift in Irradiated MOSFET by Subthreshold Methodology(2023-10-01); This paper presents the effects and determination of oxide and interface trapped charge density of threshold voltage shift in irradiated MOSFET by subthreshold methodology. The designed dimension, channel width per channel length (W/L) is 20 µm/20 µm. The threshold voltage is extracted by a linear extrapolation methodology. The over all threshold voltage shifts are caused by oxide trapped charge and interface trapped charge. The subthreshold methodology determines the interface trapped charge. The<sup>60</sup>Co gamma-ray source was used for irradiation to a total dose of 10 kGy. The results showed that the threshold voltage shift is approximately-24 mV/kGy for NMOS and-27 mV/kGy for PMOS. The subthreshold swing shift is approximately 1.2 mV/dec.kGy for NMOS and 0.9 mV/dec.kGy for PMOS. The oxide trapped charge density N<inf>OT</inf> and interface trapped charge density N<inf>IT</inf> are found to be increased in NMOS and PMOS respectively. The ratio of ΔN<inf>OT</inf>/ΔN<inf>IT</inf> was approximately 2.2 times for NMOS and 2.8 times. Due to the structure, the channel of NMOS is a surface channel whereas the channel of PMOS is a buried channel. Finally, the effect of gamma irradiation on the PMOS was greater than the effect on NMOS observed from the change in threshold voltage and the ratio of ΔN<inf>OT</inf>/ΔN<inf>IT.</inf>. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Combustion synthesis of lead-free piezoelectric alkali metal niobate family(2013-01-01); ; ; Nano-crystalline alkali metal niobate (ANbO<inf>3</inf>; A = K and Na) powders were synthesized by the combustion of nitrate compounds and Nb <inf>2</inf>O<inf>5</inf> using glycine as the fuel. The chemical reaction, nucleation mechanisms and influence of the fuel-to-oxidizer ratio to phase formation were studied. The precursor and product powders were characterized, using the thermo gravimetric analysis (TGA), Fourier transform infrared (FT-IR) spectroscopy, X-ray diffraction (XRD) technique, and scanning electron microscopy (SEM). Different fuel-to-oxidizer ratios were found to be a key factor of the process. As-prepared and calcined powders provided the perovskite structure with a nano-scale of mean crystalline size. © 2013 Copyright Taylor and Francis Group, LLC.