Khlayboonme, S.Tipawan
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Khlayboonme, S.Tipawan
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Khlayboonme, S. Tipawan
Khlayboonme, S. T.
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s.tipawan.kh@kmitl.ac.th
16 results
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Item type:Publication, Optical Properties of CuCdS Thin Film Prepared by Vacuum Thermal Evaporation Technique(2023-01-01); This study reports on the synthesis and characterizations of copper cadmium sulfide (CuCdS) thin films prepared using the vacuum thermal evaporation technique with copper sulfide and CdS as precursors in a 1:1 molar ratio. The structural properties of the thin films were analyzed using X-ray diffraction (XRD) which revealed that the main composition of the thin film was CdS with the preferred orientation of the (101) plane. The optical properties were examined using UV–Vis spectrophotometry. The photosensitivity of the films was determined using I–V measurements performed with a two-probe technique. The prepared CuCdS thin films have high optical transmittance of 92%. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Insights into the properties and possible bonding states of radiofrequency-magnetron-sputtered indium tin oxide thin films acquired using ultraviolet–visible spectroscopy data for cost-effective material characterization(2023-12-01)Indium tin oxide (Sn-doped In<inf>2</inf>O<inf>3</inf>) is an optical material that is widely utilized in designing modern optoelectronic devices. To demonstrate the efficiency of ultraviolet–visible spectroscopy as a primary analysis tool for thin-film characterization, Sn-doped In<inf>2</inf>O<inf>3</inf> films were deposited under untreated and annealed conditions. The optical parameters of these films were determined based on the transmission–reflection spectra recorded by an ultraviolet–visible spectroscopy laboratory setup. Through four-point probing, energy dispersive spectroscopy, and contact angle measurements, the electronic-band structures and chemical bonding states of the thin films were estimated. The transmission spectra confirmed that the post-annealing treatment promoted film homogeneity. Deeper insights into the optical parameters revealed that annealing encouraged Sn atom incorporation into the film structure and better stable phase formation. The incorporation of Sn atoms resulted in the substitution of Sn<sup>4+</sup> into the In<sup>3+</sup> sites of the In<inf>2</inf>O<inf>3</inf> lattice and formation of the SnO phase. Notably, our evaluation of the film properties based on data acquired from ultraviolet–visible spectroscopy revealed good consistency with the data acquired from Hall-effect, X-ray diffractometry, and X-ray photoelectron spectroscopy investigations. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Influence of reactive oxygen gas on sputtered-vanadium oxide films under post-annealing in vacuum(2021-01-01); Thowladda, WarawootVanadium oxide thin films were deposited on glass substrates by O2 reactive-RF magnetron sputtering from a vanadium (V) target without substrate-heating. The percentages of O2 gas were 10%, 7.5%, 6.0%, 5.0% and 2.5%. The total gas flow rate (O2/Ar) was kept at 25 sccm. As-deposited films were experienced post-annealing process at different temperatures and times. The crystallinity and chemical bonding states of films were examined by X-ray diffraction and Raman spectroscopy. The condition in annealing to active crystallinity depended on an earlier composition of the films. As O2-gas percentages were 10% and 7.5%, after annealing, the as-deposited VxOy films were transformed into crystalline V2O5 films. With decreasing in O2 percentage to 5.0% and 2.5%, the films were transformed into V2O3 and VO films, respectively. The films deposited with 6.0% O2 were crystallized to VO2 with phase B after annealing with 500 °C 15 h. By applying a longer time to 30 h at the high temperature 500 °C in annealing, VO2 films revealed only phase M formation. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Phase-shifting interferometry for surface roughness measurement on glass substrates(2014-01-01); Thowladda, W.Phase-shifting interferometry based on Michelson interferometer is purposed to measure surface roughness of glass slides which are widely used as substrates for thin-film coating processes. For the interferometry system, an optical flat with a flatness of λ/20 is used as a reference mirror. The high accuracy of the phase-shifting is achieved by a piezoelectric-driven linear translation stage of the reference mirror. The reference-phase difference between the twointerfering beams is shifted by every π/2 in phase-shifting. Five frames of interferograms under various phase differences of 0, π/2, π, 3π/2 and 2p are recorded by a CCD camera. Each image pixel of these frames is interpreted to access interference intensity information by five-step phaseshifting algorithm for phase calculation, which in turn relates to surface height. The purpose-built interferometry is tested by the surfaces of two optical flats with flatness of λ/10 and λ/4, which are used as the test surfaces. Our measured flatness results are consistent with those of the commercial optical profilometer. The usefulness of the purpose-built interferometry is demonstrated on two types of the glass slides. Aluminum thin films are also deposited on these glass slides by the RF magnetron sputtering method to enhance reflectivity of the glass slide surfaces. The surface profiles and flatness parameters of these glass slides have been reported. © (2014) Trans Tech Publications, Switzerland. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Effects of air exposure time and annealing temperature on superhydrophobic surface of titanium dioxide films(2017-01-01); Thowladda, WarawootTiO<inf>2</inf> thin films coated on glass substrates for self-cleaning applications were prepared by sol-gel dip-coating technique. The influence of annealing temperature and air exposure time on wettability was investigated by a water contact-angle measurement. Thermal annealing at temperatures of 100, 200 and 300 °C in air were conducted to the films. Surface morphology of the films was observed by FE-SEM. Elemental distribution and optical properties were examined by EDX mapping and UV-Vis transmission spectroscopy, respectively. Atomic bonding was confirmed by FTIR. The contact angle reached a maximum when the films were annealed at 200 °C. The contact angles of the as-synthesized films were 61.4±2.7°. During storage in air for 20 days, the contact angles increased to 143.1±2.1°. The films were further reannealed at 100 °C for 20 min, the contact angles were enhanced to 153.1±1.3°. The association of contact angle among the surface morphology, elemental distribution and atomic bonding of the films will be discussed. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Phase transformation of nanocrystalline diamond films: Effect of methane concentration(2020-01-01); Thowladda, WarawootUltra-nanocrystalline diamond films were prepared by a microwave plasma-enhanced chemical vapor deposition reactor using CH4/H2 gas mixture with a power as low as 650 W. The effects of CH4 concentration on nanostructure of the films and gas-phase species in plasma were investigated. The CH4 concentrations of 1.5%, 3.0%, 3.5%, and 4.0% were used and balanced with H2 to a total flow rate of 200 sccm. Morphology and composition of the films were characterized by SEM, Raman spectroscopy and Auger spectroscopy. The gas-phase species and electron density in the plasma were explored by optical emission spectroscopy and plasma-impedance measurement. The increasing CH4 concentration from 1.5% to 4.0% increased C2Hx species and decreased electron density. Phase of the film transform from nano-into ultranano-diamond phase but the growth rate revealingly decreased from 300 to 210 nm/h. Raman spectra indicate the higher CH4 concentration promted phase of the film transiton from NCD to UNCD. While Auger spectra revealed that UNCD film deposited with 4.0%CH4 was composed of 90.52% diamond phase but only 9.48% of graphite phase. The relation between phase transformation of the films and growth mechnism controlled by gas-phase species in the plasma will be dissused. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Effects of substrate rotational speed and phase transition on β-V2O5 for temperature-sensitive thin films(2025-12-01); The phase stability and reversibility of V<inf>2</inf>O<inf>5</inf> are crucial for smart, contactless optical thermal sensors. Controlling phase characteristics optimizes device performance, particularly by achieving lower phase-transition temperatures with reversible properties. This study examines the effects of substrate rotational speed on the phase content and homogeneity of V<inf>2</inf>O<inf>5</inf> thin films deposited via radiofrequency magnetron sputtering using an inclined magnetron head and an O<inf>2</inf>-reactive process. Characterized using X-ray diffraction, electron microscopy, Hall effect measurements, and ultraviolet–visible spectroscopy, the films exhibited a mixture of β-monoclinic and β-tetragonal phases. Increasing the substrate rotational speed from 0 to 40 rpm increased the film thickness from 125 to 220 nm but reduced the crystallite size from 16.8 to 7.9 nm for the β-monoclinic phase. The direct bandgap energy decreased from 3.582 to 2.56 eV, and the electron density decreased from 2.92 × 10<sup>18</sup> to 5.2 × 10<sup>17</sup> cm<sup>−3</sup>, suggesting suppressed depletion of vanadyl oxygen in the film structure. Optical analysis revealed that the dispersive energy for the β-monoclinic phase increased from 24.7 to 30.3 eV as the rotational speed increased—attributed to stronger polarization due to lattice vibrations. The responses of the annealed and as-deposited films to thermally induced stimuli were investigated. During cooling to 100 °C, the β-tetragonal phase content continued to increase, whereas the β-monoclinic phase content decreased and appeared to revert to levels observed before heating. This result revealed a reversible β-monoclinic phase transformation during cooling, indicating the potential of amorphous β-monoclinic V<inf>2</inf>O<inf>5</inf> films for chromic and temperature-sensitive sensors with repeatable performance. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, RF-sputtered V2O5 thin films on two different glass substrates(2021-01-01); Thowladda, WarawootThin V<inf>2</inf>O<inf>5</inf> films were deposited on two different commercial soda-lime glass substrates (A and B) by O<inf>2</inf> reactive radio frequency magnetron sputtering using a vanadium target. The influences of the surface energy and roughness of the substrates on the structure and atomic bonding of the films were examined. The film on substrate A was polycrystalline, with eight crystal orientations, whereas the film on substrate B yielded an intense (001) diffraction peak of α-V<inf>2</inf>O<inf>5</inf> and a weak (200) peak of β-V<inf>2</inf>O<inf>5</inf>, indicating preferred orientation along these planes. Structural analyses indicated that substrate B with lower surface energy and higher roughness enhanced the formation of a layered a-V<inf>2</inf>O<inf>5</inf> structure. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Comparative study of non-annealing and annealing on properties of ITO deposited by RF magnetron sputtering(2015-01-01); Warawoot, ThowladdaA comparison of the properties for two ITO thin films was performed. The two films were as follows - as-deposited and annealed ITO films. The influence of annealing on the structural, morphological, electrical, and optical properties was studied. The post-annealing treatment was done at a temperature of 400 for 1 h in air. The ITO thin films were deposited onto glass substrates by RF magnetron sputtering of a ceramic In<inf>2</inf>O<inf>3</inf>: SnO<inf>2</inf> target in pure argon atmosphere at a low base pressure of <10<sup>-6</sup> mbar and a RF power of 50 W. The films were characterized by XRD, FTIR, contact angle measurements, FE-SEM combined with EDX, Halleffect measurements and UV-Vis transmission spectroscopy. The ITO films showed a crystalline structure with a predominant orientation (400) and its intensity was increased after the film was annealed. The structure of the annealed film became reformed in more perfect columnar structure. The annealed film showed a decrease in contact angle and increase in FTIR spectra intensity. The annealing induced more tin incorporated into the film from 0.51 to 2.62 at%. The resistivity decreased from 2.7×10<sup>-3</sup> to 1.1×10<sup>-3</sup> Ω cm with increasing mobility from 7.5 to 27.5 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> but decreasing carrier concentration from 3.0×10<sup>20</sup> to 2.0 × 10<sup>20</sup> cm<sup>-3</sup>. The optical band gap increased from 3.43 to 3.50 eV. All films showed highly transparency (×85%) in the visible light region. Compared with the non-annealed ITO film, the air-annealed ITO film revealed the better properties except for carrier concentration. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Nanocrystalline diamond films deposited by two-step approach from CH4/H2 microwave plasma: The influence of reactor pressure(2013-08-30); Thowladda, W.The morphology, growth rate and atomic-bonding structure of nanocrystalline diamond films deposited on Si substrates were investigated under various pressures of the reactor. The films were deposited by CH<inf>4</inf>/H<inf>2</inf> microwave plasma with two-step deposition and H<inf>2</inf>-plasma cleaning processes. The pressures of 1, 2, 5, 9, and 25 kPa were used for deposition. In situ gas-phase species, including electron density, were monitored by an optical spectrometer and impedance analyzer. The films were characterized by SEM, Raman microscope, and white light reflectrometer. When the pressure increased, the surface smoothness and diamond grain size increased, amorphous carbon content decreased, and the intensity ratio of CH/H<inf>β</inf> for the growth step increased. The growth rate was in proportional to the ratio of CH/H<inf>β</inf> for the nucleation step but in inverse proportion to the electron density. The growth rates decreased from 370 nm/h for 1 kPa to 320 nm/h for 2 kPa. After that, the growth rate rapidly increased to 460 nm/h for 9 kPa, but it gradually decreased to 450 nm/h for 25 kPa. The film refractive indices were 2.16 for 5 kPa, 2.21 for 9 kPa, and 2.38 for 25 kPa. The films grown under 1 and 2 kPa showed highly light absorption. © (2013) Trans Tech Publications, Switzerland.