Ramamoorthy, Harihara

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Ramamoorthy, Harihara
Alternative Name
Ramamoorthy, H.
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Email
harihara.ra@kmitl.ac.th

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    Item type:Publication,
    Conduction Mechanisms in CVD-Grown Monolayer MoS2 Transistors: From Variable-Range Hopping to Velocity Saturation
    (2015-08-12)
    He, G.
    ;
    Ghosh, K.
    ;
    Singisetti, U.
    ;
    Ramamoorthy, H.
    ;
    Somphonsane, R.
    We fabricate transistors from chemical vapor deposition-grown monolayer MoS<inf>2</inf> crystals and demonstrate excellent current saturation at large drain voltages (V<inf>d</inf>). The low-field characteristics of these devices indicate that the electron mobility is likely limited by scattering from charged impurities. The current-voltage characteristics exhibit variable range hopping at low V<inf>d</inf> and evidence of velocity saturation at higher V<inf>d</inf>. This work confirms the excellent potential of MoS<inf>2</inf> as a possible channel-replacement material and highlights the role of multiple transport phenomena in governing its transistor action.
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    Thermally Assisted Nonvolatile Memory in Monolayer MoS2 Transistors
    (2016-10-12)
    He, G.
    ;
    Ramamoorthy, H.
    ;
    Kwan, C. P.
    ;
    Lee, Y. H.
    ;
    Nathawat, J.
    We demonstrate a novel form of thermally-assisted hysteresis in the transfer curves of monolayer MoS<inf>2</inf> FETs, characterized by the appearance of a large gate-voltage window and distinct current levels that differ by a factor of ∼10<sup>2</sup>. The hysteresis emerges for temperatures in excess of 400 K and, from studies in which the gate-voltage sweep parameters are varied, appears to be related to charge injection into the SiO<inf>2</inf> gate dielectric. The thermally-assisted memory is strongly suppressed in equivalent measurements performed on bilayer transistors, suggesting that weak screening in the monolayer system plays a vital role in generating its strongly sensitive response to the charge-injection process. By exploiting the full features of the hysteretic transfer curves, programmable memory operation is demonstrated. The essential principles demonstrated here point the way to a new class of thermally assisted memories based on atomically thin two-dimensional semiconductors.