Atiwongsangthong, Narin

Preferred name

Alternative Name

Atiwongsangthong, N.

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School of Engineering

narin.at@kmitl.ac.th

Now showing 1 - 6 of 6

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Improvement of independent directional magnetic field measurement technique with Hall sensors
(2013-11-04)
Mano, Athirot
;
Atiwongsangthong, Narin
;
Titiroongruang, Wisut
The independent directional magnetic field measurement is a new technique for magnetic flux density measurement with high accuracy. This technique can reduce the limitation in term of angle that magnetic flux lines interact with Hall sensors. However, the original system limits the uniformity and symmetry of magnetic field patterns, which can cause an error for measurement system. Therefore, the aim of this research is to present the method to increase measurement accuracy of system, by improve magnetic field uniformity which can be done by using electromagnet instead of permanent magnet. The system is also improved the mechanical circle motion by using stepping motor, it is used to rotate Hall sensors in magnetic field which is generated by electromagnet. The result from experiment has shown of this method that can reduce the error percentage as 5% compare with original system. This method is shown 0.99997 of coefficient of determination, which represents to accuracy in magnetic flux density measurement range 0-1350 Gauss. © (2013) Trans Tech Publications, Switzerland.
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A novel power output model for photovoltaic system
(2017-10-19)
Kittisontirak, Songkiate
;
Dawan, Promphak
;
Atiwongsangthong, Narin
;
Titiroongruang, Wisut
;
Chinnavornrungsee, Perawut
This paper proposed the novel concept model for forecasting the PV power output. The model was used two meteorology to input model which are solar irradiance and module temperature. This model was improve the accuracy of model from simplified model is 1D5P by using the weight function. The proposed model was verified by comparison with measured data. The results showed that the model has high accuracy. The RMSE ranges from 0.02 to 0.07 and average RMSE is 0.04.
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Defects study by activation energy profile for lowering leakage current in p-n junction
(2011-01-01)
Srithanachai, Itsara
;
Ueamanapong, Surada
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Rujanapich, Poopol
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Atiwongsangthong, Narin
;
Niemcharoen, Surasak
Diode leakage current consists of diffusion (I<inf>d</inf>) and generation current (I<inf>g</inf>), which is strongly sensitive to the residual defect density. These defects can be studied by activation energy (E<inf>a</inf>). Therefore, this paper presents a method for calculating activation energy of silicon p-n junctions from volume generation current. It combines temperature-dependent current-voltage (I -V) and capacitance- voltage (C-V) measurements of diodes. The I<inf>g</inf> can be found from the volume leakage current by subtraction of the volume diffusion current, which is calculated while the depletion width is zero. The activation energy (E<inf>a</inf>) is derived from slope of an Arrhenius plot of I<inf>g</inf>. To derive the correct slope the temperature dependence of the depletion width, which is obtained from the corrected volume capacitance has been applied. The E<inf>a</inf> profile below junction has been shown. The lower E<inf>a</inf> value has been found near the junction, which may relate to the junction implantation. © (2011) Trans Tech Publications.
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The effects of gamma irradiation on threshold voltage and channel mobility models of PMOS
(2018-07-02)
Kerdpradist, Amonrat
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Titiroongruang, Wisut
;
Atiwongsangthong, Narin
;
Muanghlua, Rangson
;
Ruangphanit, Anucha
This paper presents the effects of gamma irradiation on threshold voltage and mobility models of PMOS. The devices with a gate oxide thickness of 15 nm fabricated in an 0.8-micron CMOS technology were measured and tested. The electrical properties were collected pre-irradiation and after the exposure by a<sup>60</sup>Co gamma-ray source in the dose range of 1 to 10 kGy, transient dose = 290.68 Gy/hr. The results show that the threshold voltage of big MOS at zero substrate bias (VT0) increased approximately 28%, but the low field surface mobility (UO) and the maximum transconductance parameter (K0) decreased in the same value by 7.5% and the THETA (? ) parameter decreased by 28%. All parameters caused the saturation drain current of big MOS to decrease 16%. For short channel effects, the saturation drain current decreased more. Finally, the short channel model parameter should be investigated and discussed in future.
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Application of nanoporous silicon for a metal-semiconductor-metal visible light photodetector
(2011-01-01)
Atiwongsangthong, Narin
;
Niemcharoen, Surasak
;
Titiroongruang, Wisut
In this paper we present a study on the application of nanoporous silicon to an optoelectronic device called a nanoporous silicon metal-semiconductor- metal (MSM) visible light photodetector. This device was fabricated on a nanoporous silicon layer which was formed by electrochemical etching of a silicon wafer in a hydrofluoric acid solution under various anodization conditions such as the resistivity of the silicon wafer, current density, concentration of the hydrofluoric acid solution and anodization time. The structure of this device has two square Al/nanoporous silicon Schottkybarrier junctions on the silicon substrate and the electrode spacing is 500 μm. The experiment will study photoresponse and the response time of a nanoporous silicon MSM photodetector which was fabricated on the various porosity of a nanoporous silicon layer. It is found that when devices are fabricated on a higher porosity nanoporous silicon layer, the photoresponse of the device will expand toward the short-wavelength and the bandwidth of the spectrum response will cover visible light. In addition, it is found that the response time of the device decreases. Copyright © 2011 American Scientific Publishers All rights reserved.
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Leakage current measurement with the bench test in watchdog timer power down mode for microcontroller device
(2017-11-03)
Dechmunee, Parin
;
Dawan, Promphak
;
Titiroongruang, Wisut
;
Atiwongsangthong, Narin
This paper discusses the bench test for failure analysis. For identify the location of a defect on die circuit in microcontroller device. Bench (ipd-wdt) test method is very helpful. When curve tracer cannot detect the electrical leakage current in the form of I-V curve characteristic. In this article we discuss the bench test in watchdog timer power down (Ipd-wdt) mode with the closing all of frequency function and programming control watchdog timer function by C language. The program will be reference by datasheet then set to measure electrical current leakage. Then put into the OBIRCH or Ion Emission process for find defect location on die circuit. To identify the possibility that the type of defect.

Atiwongsangthong, Narin

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