Atiwongsangthong, Narin

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Atiwongsangthong, Narin
Alternative Name
Atiwongsangthong, N.
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Email
narin.at@kmitl.ac.th

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    Item type:Publication,
    The effects of gamma irradiation on threshold voltage and channel mobility models of PMOS
    (2018-07-02)
    Kerdpradist, Amonrat
    ;
    Titiroongruang, Wisut
    ;
    Atiwongsangthong, Narin
    ;
    Muanghlua, Rangson
    ;
    Ruangphanit, Anucha
    This paper presents the effects of gamma irradiation on threshold voltage and mobility models of PMOS. The devices with a gate oxide thickness of 15 nm fabricated in an 0.8-micron CMOS technology were measured and tested. The electrical properties were collected pre-irradiation and after the exposure by a<sup>60</sup>Co gamma-ray source in the dose range of 1 to 10 kGy, transient dose = 290.68 Gy/hr. The results show that the threshold voltage of big MOS at zero substrate bias (VT0) increased approximately 28%, but the low field surface mobility (UO) and the maximum transconductance parameter (K0) decreased in the same value by 7.5% and the THETA (? ) parameter decreased by 28%. All parameters caused the saturation drain current of big MOS to decrease 16%. For short channel effects, the saturation drain current decreased more. Finally, the short channel model parameter should be investigated and discussed in future.