Parnklang, Jirawath

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Preferred name
Parnklang, Jirawath
Alternative Name
Parnklang, J.
Main Affiliation
Email
jirawath.par@kmitl.ac.th

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    Item type:Publication,
    The MIIS structure capacitor fabricated with high permittivity material
    (1999-01-01)
    Parnklang, J.
    ;
    Surathammanun, J.
    ;
    Julprapa, A.
    ;
    Riewruja, V.
    ;
    Titiroongruang, W.
    The MIIS (Metal Insulator Intrinsic Semiconductor) structure capacitor consists of the aluminum, ZnO insulator and n-Type silicon doped with gold atoms. The different electrical characteristics of the devices from the standard MOIS (Metal Oxide Intrinsic Semiconductor) structure capacitor which is fabricated from SiO<inf>2</inf> are presented in this paper. The experimental results show that the threshold voltage of the devices (V<inf>TO</inf>) is smaller than the MOIS devices, the zinc oxide capacitor values (C<inf>OX</inf>) are higher but the total capacitor value (C<inf>T</inf>) of the device does not change.
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    Item type:Publication,
    Current tunable CMOS operational transresistance amplifier
    (2001-01-01)
    Riewruja, V.
    ;
    Parnklang, J.
    ;
    Julprapa, A.
    A new signal power amplifier is presented in this paper. The proposed circuit is consisted of the new design of transresistance amplifier cell connecting with the common source negative feedback and the output driver circuit. The input and output impedance of the circuit is low because the negative feedback and output driver circuit are used. The voltage buffer is use for the output driver circuit. The new transresistance amplifier is found to have a constant bandwidth independent of gain in most close-loop configurations. The feedback network particular increased bandwidth and enhances the linearity of the transresistance amplifier. The biasing current of this shunt-shunt common source negative feedback can also tune the gain of the close-loop circuit configuration. In this work has shown an experimental result of the fundamental transresistance amplifier by used the commercial integrated circuits compared to the simulation result. And this confirms that the new design of transresistance amplifier is useable.