Mano, Kitipong
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Mano, Kitipong
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kitipong.ma@kmitl.ac.th
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Item type:Publication, Study on optical and electronic properties of Sn-doped ZnPc(2013-10-29); ; Sn doped ZnPc films were deposited on intrinsic Si and glass substrates by organic source thermal co-evaporation technique with different deposition rates. Optical properties and electronic structure were characterized by UV-Vis spectroscopy and X-ray photoelectron spectroscopy (XPS) respectively. The UV-Vis results showed that phase transition of ZnPc from α- phase to β-phase occurred when Sn:ZnPc deposition rate is 0.3:0.7 or higher. XPS results indicated that the outer s electron of Sn atom is transferred to the ZnPc. Broadening of the C 1s spectra is observed with the increasing of Sn deposition rate. This broadening corresponds to the change of molecular environment surrounding carbon atoms in the Sn-doped ZnPc films. © (2013) Trans Tech Publications, Switzerland. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Growth and characterizations of tin-doped nickel-phthalocyanine thin film prepared by thermal co-evaporation as a novel nanomaterialThe aim of this research is to control specific properties of nickel-phthalocyanine (NiPc) thin film by doping with tin (Sn). The hybrid thin films, Sn-doped NiPc, were fabricated by thermal co-evaporation as a function of Sn concentration. The quantity of Sn in NiPc matrix was controlled via the different deposition rate between Sn and NiPc. The specific properties of the hybrid films, e.g. morphology, optical absorption, chemical bonding as well as electrical characteristics of the devices used such hybrid material as an active layer were characterized by combinations of microscopic and spectroscopic techniques. The experimental results evidently present the modification of thin film properties by adding Sn into NiPc matrix, i.e. the change of morphology from granules to fibers, the increase of beta-phase formation in the films as well as the enhancement of electrical properties resulting from the increase of both charge carrier mobility and carrier concentration in the hybrid material. Moreover, the internal formation of the Sn-doped NiPc reveals that Sn dopants are embedded in the NiPc matrix as Sn metal clusters coated with derivative metal oxide of Sn (SnO<inf>x</inf>). This research demonstrates that the doping metal-phthalocyanine with metal is an alternative approach to control the specific properties that possibly suit for organic electronic applications. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Current-mode 4 quadrant divider employing only single active element(2012-12-01); ; Maneewan, SuwatThis article presents a current-mode 4 quadrants divider using single current controllable current conveyor transconductance amplifier (CCCCTA). The magnitude of the output signal is temperature-insensitive. The proposed circuit consists of only single CCCCTA. Without any matching conditions and external passive elements, the circuit is then appropriate for an IC architecture. The PSpice simulation results are depicted, and the given results agree well with the theoretical anticipation. The power consumption is approximately 4.84mW at ±2.5V supply voltages. © 2012 IEEE.