Now showing 1 - 10 of 11
  • Some of the metrics are blocked by your 
    Item type:Publication,
    A simplified and powerful image processing methods to separate Thai jasmine rice and sticky rice varieties
    (2018-01-01)
    Khondok, Piyoros
    ;
    ;
    Suwansukho, Kajpanya
    A simplified and powerful image processing procedures to separate the paddy of KHAW DOK MALI 105 or Thai jasmine rice and the paddy of sticky rice RD6 varieties were proposed. The procedures consist of image thresholding, image chain coding and curve fitting using polynomial function. From the fitting, three parameters of each variety, perimeters, area, and eccentricity, were calculated. Finally, the overall parameters were determined by using principal component analysis. The result shown that these procedures can be significantly separate both varieties.
  • Some of the metrics are blocked by your 
    Item type:Publication,
    Enhanced hydrophilicity for TiO2 nanotube array by simultaneous nitrogen plasma and thermal annealing treatments
    (2018-09-05)
    Sattha, Chanawee
    ;
    ;
    In this work, highly ordered TiO<inf>2</inf> nanotube (TNTs) array was fabricated by electrochemical anodization technique on titanium sheet. Simultaneous N<inf>2</inf> plasma and thermal annealing process were employed on TNTs using different N<inf>2</inf> gas flow rates at 500°C. As-anodized and N<inf>2</inf> plasma TNTs were characterized for their microstructure, surface elemental composition, and wettability by scanning electron microscope, X-ray diffraction, X-ray photoelectron spectroscopy (XPS), and contact angle measurement, respectively. It was found that N<inf>2</inf> plasma and thermal annealing treatments affect to the change of crystal structure, surface chemistry and wettability of TNTs. The N<inf>2</inf> plasma TNTs exhibits anatase phase with the orientations of (101) and (200). XPS spectra show that the nitrogen atom from plasma was introduced into the surface of TNTs and depends on the N<inf>2</inf> gas flow rates. From contact angle measurement, it can be observed the improvement of wettability (hydrophilicity) of the TNTs due to the N-doped TiO<inf>2</inf> nanotube after N<inf>2</inf> plasma and thermal annealing treatments.
  • Some of the metrics are blocked by your 
    Item type:Publication,
    Figures of merit of low-cost CuAl0.9Fe0.1O2 thermoelectric material prepared at different solid state reaction sintering temperatures
    (2015-01-01) ;
    Thonglamul, Rungnapa
    ;
    In this study, we investigated a CuAl<inf>0.9</inf>Fe<inf>0.1</inf>O<inf>2</inf> compound prepared at two different sintering temperatures in order to find out the effects of sintering temperature on the compound's figure of merit of thermoelectric properties. The thermoelectric CuAl<inf>0.9</inf>Fe<inf>0.1</inf>O<inf>2</inf> compounds were prepared from high purity grade Cu<inf>2</inf>O, Al<inf>2</inf>O<inf>3</inf> and Fe<inf>2</inf>O<inf>3</inf> powders. The mixture of these powders were ground and then pressed with uniaxial pressure into pellets. The pellets obtained were sintered in the air at 1423K and 1473K. X-ray diffraction (XRD) patterns showed a single phase of CuAl<inf>0.9</inf>Fe<inf>0.1</inf>O<inf>2</inf> with rhombohedral structure, R3¯m, along with a trace of CuO second phase. Moreover, the XRD peaks of the sample sintered at 1423K indicated that more Fe<sup>3+</sup> atoms replaced Al3+ atoms in this sample than they did in the sample sintered at 1473K. The average grain size of the CuAl<inf>0.9</inf>Fe<inf>0.1</inf>O<inf>2</inf> compound prepared increased with increasing sintering temperature, whereas its mean pore size and porosity decreased with increasing sintering temperature. The dispersed small pores markedly decreased the thermal conductivity of the compound, while the Fe<sup>3+</sup> substitution of Al<sup>3+</sup> increased its electrical conductivity. The highest figure of merit (ZT) found was 0.021 at 973K in the CuAl<inf>0.9</inf>Fe<inf>0.1</inf>O<inf>2</inf> sample sintered at 1423K. Our findings show that this low-cost material with a reasonable figure of merit is a good candidate for thermoelectric applications at high-temperature.
  • Some of the metrics are blocked by your 
    Item type:Publication,
    Method of high active preparation and electrical properties of CuFeO2 delafossite-type
    (2014-01-01) ;
    Wichainchai, Aree
    ;
    ;
    Hongaromkid, Yuttana
    ;
    In this paper, the CuFeO<inf>2</inf> compound were prepared by classical solid state reaction (CSSR) and direct powder dissolved solution (DPDS) method from starting material metal oxides and metal powders. Preparation of two methods shows that, direct powder dissolved solution faster recover phases than classical solid state reaction method. The fastest method gets from starting materials Cu and Fe metal powders, the electrical conductivity, Seebeck coefficient, carrier concentration and mobility are 10. 68 S/cm, 244. 59 μV/K, 12. 86×10<sup>16</sup> cm<sup>-3</sup> and 494. 96 cm2/V. s, respectively. In addition, each CuFeO<inf>2</inf> compounds were investigated on crystal structure and electrical properties. From XRD and SEM results, all samples have a crystal structure delafossitetype (R3m) and a large grain boundary more than 15 μm by electrical conductivity corresponds to grain boundary and lattice parameter: a increases. Within this paper, from above results exhibit that preparation CuFeO<inf>2</inf> from Cu and Fe by direct powder dissolved solution method most appropriate for thermoelectric oxide materials due to high active for preparation else high lattice strain and high power factor are 0. 00052 and 0. 64×10<sup>-4</sup> W/mK<sup>2</sup>, respectively. © (2014) Trans Tech Publications, Switzerland.
  • Some of the metrics are blocked by your 
    Item type:Publication,
    Changes in structural, morphological, and corrosion properties of CrN thin film effected by varying N2 pressure In the sputtering process
    (2015-01-01)
    Wongtanasarasin, Wichuda
    ;
    ;
    Suwansukho, Kajpanya
    ;
    In this study, we investigate a facet of the fabrication process of chromium nitride (CrN) film intended as a protective coating for pineapple blades. CrN thin films were deposited on unpolished stainless steel substrates (AISI304) by DC reactive magnetron sputtering in Ar+N<inf>2</inf> gases. In principle, the proportion of nitrogen partial pressure to the total pressure in the sputtering process should have considerable effects on the CrN film's chemical composition, its crystal structure, its hardness, and its corrosion resistance. We tested this supposition out by using several different nitrogen partial pressures in the sputtering process and observed the films deposited. The coatings were deposited at five different nitrogen partial pressures of 4.0×10<sup>-4</sup> mbar, 8.0×10<sup>-4</sup> mbar, 1.2×10<sup>-3</sup> mbar, 1.6×10<sup>-3</sup> mbar, and 2.0×10<sup>-3</sup>. The deposition times were controlled to achieve 5-μm thick films in each deposition. The films were analyzed by several analytical methods, such as X-ray diffraction (XRD), scanning electron microscope, micro-hardness and potentiostat in pineapple juice. The XRD spectra of the films showed face-centered cubic structure with (200) preferred orientation, positively identifying them as Cr<inf>2</inf>N and CrN thin films. The calculated d-spacing and lattice parameter of the CrN films increased with increasing nitrogen partial pressure; the ranges were 0.283-0.287 nm and 0.491-0.497 nm, respectively. The cross-section morphology of the CrN films reveals the columnar grain growth with a high density. The crystal structure and the grain texture correspond with the hardness property. The films corrosion potential, an indicator of their corrosion property, was varied from -0.14 to -0.05 volts with varying nitrogen pressure. The most corrosion resistant and the good hardness were the film fabricated at the nitrogen partial pressure of 1.2×10<sup>-3</sup> mbar.
  • Some of the metrics are blocked by your 
    Item type:Publication,
    Hardness and wear resistance improvement of ABS surface by CrN thin film
    This work aims to investigate the effect of sputtering power on the hardness and wear resistance of chromium nitride (CrN) thin films deposited on the acrylonitrile butadiene styrene (ABS) substrates. These coatings were performed by a reactive DC magnetron sputtering technique. The values of sputtering power were adjusted in the range of 125-200 W. The total pressure (P<inf>t</inf>), nitrogen partial pressure (P<inf>N2</inf>), and sputtering time were kept constant at 4×10<sup>-3</sup> mbar, 30%, and 120 min, respectively. The surface roughness of the thin films was characterized by atomic force microscopy (AFM). The crystalline structure of these CrN thin films was studied using X-ray diffraction (XRD). The hardness and Young's modulus of the CrN coated ABS samples were analyzed by a nanoindentation hardness test. Wear resistance tests under ambient air condition at room temperature were carried out by pin-on-disc method. The wear scars of the samples were determined by scanning electron microscope (SEM). The results showed that the hardness values were varied from 6.65 to 9.58 GPa. Young's modulus of the samples was changed from 30.87 to 44.25 GPa. The CrN coating deposited on the ABS substrate at 175 W exhibited the highest hardness of 9.58 GPa which value is as high as that of steel. This indicated its potential and promising applications as hard coating layers for ABS plastic parts.
  • Some of the metrics are blocked by your 
    Item type:Publication,
    The influence of N2 partial pressure on color, mechanical, and corrosion properties of TiN thin films deposited by dc reactive magnetron sputtering
    (2015-01-01)
    Nimnual, Pisitpat
    ;
    ;
    Multi-functional thin films have gained increasing importance in a decorative application. Among the available material, titanium nitride (TiN) thin film is interesting due to its golden color and mechanical resistance. Beside their properties, the corrosion property of TiN films is mainly considered in order to extend the life time. In this work, the TiN thin films were deposited on 3×3 cm<sup>2</sup> Si(100) substrates by dc reactive magnetron sputtering technique. The effects of N<inf>2</inf> partial pressure (P<inf>N2</inf>) on deposited film properties such as microstructure, surface morphology, color, mechanical and corrosion properties were investigated. We found that the crystal structure of the TiN films exhibit the (200) preferred orientation. The color of TiN films change from gold-yellow to gold-red colors by increasing of N<inf>2</inf> partial pressure that could be explained by Drude model. The TiN films have smoother surface when the N<inf>2</inf> partial pressure increases. Standard corrosion tests in artificial sweat solution show the corrosion current density (i<inf>corr</inf>) in the range between 0.25 to 4.25 μA/cm<sup>2</sup> and the polarization resistance increases with increasing of N<inf>2</inf> partial pressure. The highest hardness of the film is approximately 40 GPa with elastic modulus of 340 GPa. We conclude that N<inf>2</inf> partial pressure corelates with color, mechanical property and corrosion resistance of TiN films, which were optimized to use in decorative application.
  • Some of the metrics are blocked by your 
    Item type:Publication,
    Resistive switching behavior of Ti/ZnO/Mo thin film structure for nonvolatile memory applications
    In this work, we study the resistive switching behavior of a new model metal/insulator/metal (MIM) junction. The MIM junction consists of titanium front electrode, zinc oxide insulation layer and molybdenum back electrode. The Ti/ZnO/Mo structure was prepared on 3×3 cm<sup>2</sup> soda lime glass substrates using dc magnetron sputtering for metal electrodes and rf magnetron sputtering for ZnO layer. The thicknesses of Ti, ZnO and Mo films were controlled at 200nm, 50nm and 500nm, respectively. The crystalline structure and microstructure of the films were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). The current-voltage (I-V) characteristics of the device cells were obtained by using dc voltage sweep mode. The XRD spectra of the devices show Mo(100) and ZnO(002) preferred orientations. The Mo and ZnO film surfaces exhibit dense crystallized grains with the root mean square roughness (RMS) of 1.0 and 1.4 nm, respectively. The device cells behave unipolar resistive switching characteristics with reversible, controllable and reliability within 150 cycles. The difference between high resistive state (HRS) and low resistive state (LRS) is about 10<sup>3</sup> times. A low operating voltage range of 0.50-0.60V is obtained for switching from HRS to LRS at a current compliance of 10mA. The new MIM structure was demonstrated and suggested a potential to use as nonvolatile memory application.
  • Some of the metrics are blocked by your 
    Item type:Publication,
    Improvement of structural, morphological and mechanical properties of CrNx sputtered thin films by vacuum annealing process
    (2017-01-01)
    Nualkham, Intira
    ;
    ;
    In this study, CrNx thin films were prepared on 304 stainless steel substrate by DC reactive magnetron sputtering technique. Different N2 gas partial pressure from 10 to 30% was employed in the sputtering process while sputtering power, sputtering pressure and total film thickness were kept constant. In order to improve structural, morphological, and mechanical properties, vacuum annealing process was adopted on the CrNx thin films at the temperature of 400 °C. The standard characterization techniques such as X-ray diffraction, scanning electron microscope, atomic force microscope and hardness (load force of HV0.1) were used to reveal the properties of as-deposited and annealing films. The as-deposited films show two-phase crystal structure of Cr2N and CrN depending on N2 gas partial pressure. After the annealing process, the films effectively enhance the crystal structure and found the phases change from Cr2N to CrN for the film deposited at low N2 partial pressure. The surface roughness of the films was between 5 - 20 nm, and as expected the annealing films shows smoother surface than the as-deposited films. Hardness of the CrNx films is in the range of 7 to 10 GPa. The mechanism of improvement in structural and mechanical properties of annealing films is introduced based on strain relaxation.
  • Some of the metrics are blocked by your 
    Item type:Publication,
    Improved Transparent Gas Sensor Properties of Cu-Doped SnO2 Films using O2 Plasma Treatment
    Cu-doped SnO<inf>2</inf> films were deposited on glass slide substrate using an RF magnetron sputtering method. The effects of O<inf>2</inf> partial pressures in the deposition process and post O<inf>2</inf> plasma treatment were assessed for optical and sensing properties. O<inf>2</inf> partial pressures from 2% to 10% were assessed. Post-plasma treatment used a 15 mL/min O<inf>2</inf> flow, 450 °C annealing temperature and 30 min treatment time. Optical transmission spectra showed that the films deposited at higher O<inf>2</inf> partial pressures had higher transparency and increased band gaps from 3.08 to 3.78 eV. After O<inf>2</inf> plasma treatment, the films showed better than optical transmission. However, when the O<inf>2</inf> partial pressure increased to 10%, the optical transmission declined slightly because the film had higher surface roughness, smaller crystals and fewer oxygens in the parent rutile tetragonal cells, enhanced the sensor response at room temperature.