Rahong, Sakon

Preferred name

Rahong, Sakon

Alternative Name

Rahong, S.

Main Affiliation

Integrated Innovative Technology

sakon.ra@kmitl.ac.th

Now showing 1 - 4 of 4

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Influence of Antimony Species on Electrical Properties of Sb-Doped Zinc Oxide Thin Films Prepared by Pulsed Laser Deposition
(2023-06-01)
Jessadaluk, Sukittaya
;
Khemasiri, Narathon
;
Kayunkid, Navaphun
;
Rangkasikorn, Adirek
;
Wirunchit, Supamas
This study systematically investigates the influence of antimony (Sb) species on the electrical properties of Sb-doped zinc oxide (SZO) thin films prepared by pulsed laser deposition in an oxygen-rich environment. The Sb species-related defects were controlled through a qualitative change in energy per atom by increasing the Sb content in the Sb<inf>2</inf>O<inf>3</inf>:ZnO-ablating target. By increasing the content of Sb<inf>2</inf>O<inf>3</inf> (wt.%) in the target, Sb3+ became the dominant Sb ablation species in the plasma plume. Consequently, n-type conductivity was converted to p-type conductivity in the SZO thin films prepared using the ablating target containing 2 wt.% Sb<inf>2</inf>O<inf>3</inf>. The substituted Sb species in the Zn site (Sb<inf>Zn</inf>3+ and Sb<inf>Zn</inf>+) were responsible for forming n-type conductivity at low-level Sb doping. On the other hand, the Sb–Zn complex defects (Sb<inf>Zn</inf>–2V<inf>Zn</inf>) contributed to the formation of p-type conductivity at high-level doping. The increase in Sb<inf>2</inf>O<inf>3</inf> content in the ablating target, leading to a qualitative change in energy per Sb ion, offers a new pathway to achieve high-performing optoelectronics using ZnO-based p–n junctions.
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Phase evolution in annealed Ni-doped WO3 nanorod films prepared via a glancing angle deposition technique for enhanced photoelectrochemical performance
(2022-05-15)
Wattanawikkam, Chakkaphan
;
Bootchanont, Atipong
;
Porjai, Porramain
;
Jetjamnong, Chanthawut
;
Kowong, Rattanachai
Ni-doped WO<inf>3</inf> nanorod films were fabricated via a reactive magnetron cosputtering with a glancing angle deposition technique. The crystal structure and surface morphology were observed using grazing incident X-ray diffraction and field emission Scanning Electron Microscopy, respectively. The chemical compositions and oxidation state of each element were investigated by X-ray photoemission spectroscopy. The local structure and phase evolution were investigated via X-ray absorption spectroscopy. The local structure of Ni atoms in WO<inf>3</inf> nanorod films is characterized as a NiWO<inf>4</inf> nanocluster in the WO<inf>3</inf> matrix, which is supported by calculated spectra. The phase information obtained after annealing demonstrates that short-length order in amorphous transitions to crystallinity. The phase information of the local structures were acquired and discussed as well as the effect on the annealing process. The coupling of amorphous WO<inf>3</inf>, crystalline WO<inf>3</inf>, and amorphous NiWO<inf>4</inf> exhibits high photoelectrochemical activity of the sample annealed at 400 °C, which was observed with a large current density (2.35 μA/cm2) at 1.20 V vs. Ag/AgCl under visible light irradiation, which is greater than that of the unmodified WO<inf>3</inf> photoelectrode (1.38 μA/cm2).
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Systematic investigations on morphological properties of aluminum-doped zinc oxide transparent electrode prepared from pulsed laser deposition and its electrochromic application
(2023-03-01)
Khemasiri, Narathon
;
Klamchuen, Annop
;
Jessadaluk, Sukittaya
;
Rattanawarinchai, Prapakorn
;
Borklom, Punlapa
Transparent electrode (TE) is considered as one of the fundamental components in the optoelectronics. The surface of TE layer plays a crucial role in the charge-transport characteristics. Herein, a systematic investigation on the morphological properties of the laser-ablated aluminum-doped zinc oxide (AZO) films as a TE material prepared from various laser fluences is demonstrated. It is revealed that the electrical properties of AZO films are strongly associated with their surface properties rather than that of the bulk film. As the laser fluence increased, the concentration of Al-dopant in AZO films is decreased which directly impacts on the electrical properties. Such vanishment is originated from the bombardment of the incident particles/ions with excessive kinetic energy on film's surface during the deposition. Moreover, the optimized AZO film with low resistivity (1.13 × 10−3 Ω cm) and high optical transmittance (over 90%) achieved from controlling the laser fluence at 0.7 J/cm2 is employed as TE layer in the electrochromic device. Our results highlight that the surface properties of TE layer are very critical for electronic performance.
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GROWTH TIME DEPENDENCE ON PHOTOELECTROCHEMICAL PROPERTY of ZINC OXIDE NANORODS PREPARED by HYDROTHERMAL SYNTHESIS
(2018-12-01)
Rattanawarinchai, Prapakorn
;
Khemasiri, Narathon
;
Jessadaluk, Sukittaya
;
Chananonnawathorn, Chanunthorn
;
Horprathum, Mati
Here, the dependence of growth time on the growth behavior, morphology and photoelectrochemical (PEC) properties of ZnOnanorods (ZnO-NRs) as a photoanode are demonstrated. Vertical-aligned ZnO-NRs with c-axis perpendicular to substrate were accomplished via seed-assisted hydrothermal technique at the growth time varying between 0.5 and 24h. Growth behaviors of ZnO-NRs can be described into three regimes, which consist of the nucleation stage, ZnO-NRs growth and saturation growth, respectively. ZnO nanoparticles (NPs) corresponding to the nucleation site occur at the growth time below 1h. Afterward, the growth regime of ZnO-NRs, which originated from the competition between the vertical and the lateral growth, is clearly observed, and leads to increase in length and diameter. The whole growth of ZnO-NRs is terminated after 16h, attributed to low amount of Zn 2+ and OH - supplied from growth solution. PEC measurement reveals the fast solar response and high photostability of ZnO-NRs. Additionally, the photoconversion efficiency (η) improves with the growth time of 4h and degrades for longer time due to the change of total surface area. The maximum η of 0.13% at 0.63V <inf>RHE</inf> is obtained for the growth time of 4h. Our results highlight that the growth time plays a crucial role in controlling growth behavior and the total surface area directly related with the PEC properties of ZnO-NRs.

Rahong, Sakon

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