Muanghlua, Rangson

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Muanghlua, Rangson
Alternative Name
Muanghlua, R.
Muanghlua, Rangsan
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Email
rangson.mu@kmitl.ac.th

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    Item type:Publication,
    Porous Silicon Formation by Stain Etching on Pyramid Surface in U-Shape MSM Photodetector
    (2024-01-01)
    Muanghlua, Rangson
    ;
    Atiwongsangthong, Narin
    ;
    Vijafun, Jidapa
    ;
    Suttijalern, Kamonwan
    ;
    Niemcharoen, Surasak
    In this paper, the porous silicon formation on pyramid surface in U-shape MSM photodetector was studied. Stain etching technique was used to prepare porous silicon material. The solution for stain etching contained the mixed solution of hydrofluoric acid (HF), nitric acid (HNO<inf>3</inf>) and deionized water (DI) with ratios 1: 3: 5 and used halogen lamp expouse 30,000 lux between etching for excite porous formation in 2 minutes. Porous silicon was fabricated on pyramid surface in U shape which between metal electrode titanium and aluminum on p-type silicon 20-25 Ω-cm to reduce the reflection of incident light and to increase a photocurrent of MSM photodetector. In the final part of this paper are the comparison physical morhhology and electrical characteristic of porous silicon on pyramid surface in U shape MSM photodetector with pyramid in U-shape MSM photodetector without porous silicon on the surface and planar MSM photodetector. The physical morphology of porous silicon on pyramid surface in U-shape was studied by using scanning electron microscopy (SEM). The electrical characteristic was investigated by using incident light with wave length 635 nm and power 6 mW at bias voltage 10 V. The result of comparison, we found that porous silicon on the surface of pyramid in U-shape MSM photodetector is rougher than pyramid in U-shape MSM photodetector without porous silicon on the surface. The electrical characteristic of porous silicon on pyramid surface in U-shape MSM photodetector respond incident light higher than pyramid in U-shape MSM photodetector without porous silicon on the surface. Therefore the forming porous silicon on the suface of pyramid in U-shape MSM photodetector is appropriate for the fabrication of MSM photodetector with high photocurrent.
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    Enhancing PV system modeling accuracy with the irradiance intensity selection technique
    (2026-06-01)
    Songtrai, Sasiwimon
    ;
    Chinnavornrungsee, Perawut
    ;
    Sriprapha, Kobsak
    ;
    Kobayashi, Tomonao
    ;
    Niemcharoen, Surasak
    This study is a method to improve the accuracy of photovoltaic (PV) power modeling by the irradiance intensity segmentation. The developed model was compared with 2 years of data from PV system in Thailand and the original 1D5P and weight function models to determine accuracy. The results show that by applying the irradiance intensity selection technique with a 1D5P equivalent circuit model improved the accuracy of the proposed model. The proposed method achieved a significantly lower %root mean square error (%RMSE) compared with other models yielding %RMSE values of 0.26% under clear-sky and 2.80% under cloudy conditions. Seasonal evaluation further demonstrated improved prediction accuracy, with the lowest deviation observed during the rainy period, attributed to reduced dust accumulation. A 2 years comparison confirmed the proposed model exhibited the lowest deviation of 0.69%, outperforming conventional PV simulation programs. These findings indicate that irradiance segmentation enhances forecasting performance and provides accurate PV output estimation under real environmental conditions.
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    Development of Flexible Semiconductors Based on g-C3N4/Cu2O P–N Heterojunction for Triboelectric Nanogenerator Application
    (2023-01-01)
    Worathat, Supakarn
    ;
    Pharino, Utchawadee
    ;
    Sriphan, Saichon
    ;
    Niemcharoen, Surasak
    ;
    Thitirungraung, Wisut
    This research aims to develop flexible semiconductors for triboelectric nanogenerator (TENG) applications. The sample powders of graphitic carbon nitride (g-C<inf>3</inf>N<inf>4</inf>) and copper (I) oxide (Cu<inf>2</inf>O) as N-type and P-type semiconductors, respectively, were synthesized. The semiconductors were prepared to be a composite film with alginate. The structure, morphology, and purity of the N- and P-type semiconductors were characterized using X-Ray diffraction and scanning electron microscopy techniques. Through the optical characterization, the N-type semiconductor showed the calculated energy band gap of 2.80 eV, while the P-type semiconductor was 1.90 eV. The P–N junction property of prepared samples was confirmed using a nonlinear current–voltage characteristic. After that, two flexible semiconductors were frictional paired for TENG. Through a vertical contact-separation mode, the P–N junction-based TENG produced a maximum output voltage and current of 3.90 V and 0.44 µA, respectively, with a maximum output power of 0.35 µW at 10 MΩ. In summary, the present work achieved the preparation of flexible P- and N-type semiconductors. The feasibility to harvest the mechanical energy was demonstrated in the TENG configuration. This idea is crucial for the future development of flexible harvesting/sensing devices using a novel concept.