Muanghlua, Rangson

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Muanghlua, Rangson
Alternative Name
Muanghlua, R.
Muanghlua, Rangsan
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Email
rangson.mu@kmitl.ac.th

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    Item type:Publication,
    Extraction of BSIM3V3 junction capacitance model of nMOSFET in VLSI: Devices,circuits and systems
    (2018-07-02)
    Ruangphanit, A.
    ;
    Pedlub, R.
    ;
    Muanghlua, R.
    An extraction methodology and modeling of BSIM3v3 junction capacitance of NMOSFET in VLSI is proposed. In this paper, the extraction can lead to an improved accuracy on p-n junction capacitance. This methodology can extract parasitic capacitance due to bottom area junction and side-wall capacitance components at the field oxide side and gate oxide side. The capacitance model parameters in BSIM3v3 are proposed also. The manual calculation was used for the extraction methodology. A comparison is made to checking the accuracy of the capacitance models. The results show that a good agreement was found.