Nukeaw, Jiti

Preferred name

Nukeaw, Jiti

Alternative Name

Nukeaw, J.

Nukeaw, Jitti

Nukeaw, Jiji

Main Affiliation

Integrated Innovative Technology

jiti.nu@kmitl.ac.th

Now showing 1 - 10 of 13

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The innovative AlN-ISFET based pH sensor
(2008-10-06)
Bunjongpru, W.
;
Porntheeraphat, S.
;
Trithaveesak, O.
;
Somwang, N.
;
Khomdet, P.
This innovative pH-ISFET sensor used nanocrystalline-AlN thin film as ion-sensitive membrane which prepared by reactive gas-timing r.f, magnetron sputtering without heating substrate and post annealing. The technique of gas-timing r.f. magnetron sputtering purposed by us, the feeding gas is on-off controlled periodically in such a way that the deposited AlOxNy film has a quite stable composition of aluminum, nitrogen and oxygen (A1:O:N=52:18:30 %) all over the entire film. The AlN-ISFET devices were structured. The pH-sensitivity characteristics show increasing sensitivity depended on film thickness. The highest sensitivity is 54.50 mV/pH achieved from 80 nm of AlN thin film which is comparable to our previous report Si<inf>3</inf>N<inf>4</inf>-ISFET devices. © 2008 IEEE.
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UV-enhanced photodetector with nanocrystalline-TiO 2 thin film via CMOS compatible process
(2011-12-01)
Bunjongpru, W.
;
Panprom, P.
;
Porntheeraphat, S.
;
Meananeatra, R.
;
Jeamsaksiri, W.
This research presents nanocrystal titaniumdioxide (nanocrystal-TiO <inf>2</inf>) film deposition technique with CMOS compatible process [1] to extend the optical response bandwidth of silicon based photodetecting devices toward ultraviolet range [2]. The thin films were initially deposited as Titanium Nitride (TiN) using DC magnetron reactive sputtering system. It was then annealed under nitrogen atmosphere at 800°C. After analyzing crystal structures and surface morphology with X-ray diffraction and FE-SEM systems, it was found that the deposited thin films showed the crystal phase of TiO <inf>2</inf> oriented along (200) plane of Rutile crystal structure with 50 nm grain size and increasing with film thickness. Using electroreflectance (ER) spectroscopy measurement [3], the bandgap of nanocrystal-TiO <inf>2</inf> was revealed to be 3.16 eV. PN-heterojunction photodiodes were fabricated with Nanocrystal-TiO <inf>2</inf>/SiO <inf>2</inf>/p-Si structures. Interdigitated aluminum structures were used as electrodes. By varying the thickness of nanocrystal-TiO <inf>2</inf> film, i.e. 30, 60, and 90 nm, the devices could response further into the UV range. The absorption edge wavelength investigated by photoresponse measurement was at 275 nm and shifting to the shorter wavelength as a function of the nanocrystal-TiO <inf>2</inf> grain size due to quantum confinement phenomenon [4]. The nanocrystal-TiO <inf>2</inf>/SiO <inf>2</inf>/p-Si photodetector had dark current = 5.31nA (2V), photocurrent = 0.9 uA, rise time = 58 us, fall time = 47 us at 30 nm thickness of TiO <inf>2</inf>. © 2011 IEEE.
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A disposable polydimethylsiloxane microdevice for DNA amplification
(2010-02-05)
Lekwichai, A.
;
Porntheeraphat, S.
;
Bunjongpru, W.
;
Sripumkhai, W.
;
Supadech, J.
In this study, we demonstrate the disposable polydimethylsiloxane (PDMS) microchip provided for DNA amplification. The device consists of two main parts. The first part is PDMS/glass stationary chamber, the other part is a temperature-control microdevice on SiO<inf>2</inf>/Si substrate. This device consists of a thin film Pt-microheater and a Pt-temperature sensor, which were fabricated with CMOS compatible process. The performance of the device in the DNA amplification shows that, with 10 μl of PCR mixture volume, the approximately 700 bp DNA were successfully amplified within 50 minutes by 30 PCR cycles. The amplified products were comparable with those of a conventional method using electrophoresis. The PCR chip is also suitable for mass production. © (2010) Trans Tech Publications.
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Oxygen gas-timing control for variety properties of sputtered-ZnO
(2010-02-05)
Limwichean, K.
;
Porntheeraphat, S.
;
Bunjongpru, W.
;
Panprom, P.
;
Pankiew, A.
In this report, we present sputtered zinc oxide (ZnO) thin films grown with different argon (Ar) and oxygen (O<inf>2</inf>) gas-timing sequence. Metallic zinc (Zn) with 5N-purity was used as a sputtering target, while Ar and O <inf>2</inf> of 6N-purity were used as the bombard and reactive gases, respectively. The crystalline orientation, surface morphology, chemical composition, optical and electrical properties of deposited ZnO thin films were determined by XRD,AFM and UV-VIS measurement, respectively. The XRD result implied that deposition ZnO thin films at different O<inf>2</inf> gas-timing control corresponded to the (002) plane of hexagonal ZnO structure at 2θ = 34.4°. Furthermore, when the reactive time of O<inf>2</inf> was increased, the transmittance of ZnO thin films exhibited the energy gap increase from ∼2.95 to ∼3.18 eV, whereas the surface roughness was found to decrease. Finally, ZnO thin films were oxidized after the deposition. © (2010) Trans Tech Publications.
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Application of double gate ion sensitive field effect transistor for detection of fluid flow rate in micro-channel
(2010-02-05)
Jiemsakul, T.
;
Trithaveesak, O.
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Bunjongpru, W.
;
Hruanun, C.
;
Poyai, A.
In this work a micro flow sensor, using a double gate Ion Sensitive Field Effect Transistor (ISFET) and two metal electrodes, for fluid flow rate measurement in micro-channels were fabricated and demonstrated. By the channel fabrication the molds were patterned reversely on a silicon wafer using Deep Reactive Ion Etcher (DRIE). The double gate ISFET and two metal electrodes were placed on the mold in the distance 15 millimeters. The channels were formed using polydimethylsiloxane (PDMS) from the mold with the width 1000 and 2000 micrometer and the depth of 250 micrometer. After removing PDMS from the mold the channel was bonded with glass substrate by RF plasma technique. By the verification of flow sensors working range water and one mole of sodium nitrate solution were alternated in flow channel. The fluid flow rate were compared with the flow rate from weighing. It found from the comparison that the high deviation was found at low flow rate. Furthermore, the deviation depends also on the dimension of the flow channel. © (2010) Trans Tech Publications.
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High-dielectric constant AlON prepared by RF gas-timing sputtering for high capacitance density
(2008-10-01)
Poyai, A.
;
Bunjongpru, W.
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Klunngien, N.
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Porntheerapat, S.
;
Hruanan, C.
This paper presents the method to prepare and characterize high-dielectric constant aluminum oxynitride (AlON) formed by RF gas-timing sputtering. AlON layers of 725 nm have been prepared on metal-dielectric-metal structure with substrate temperature below 100 °C. Capacitance versus bias voltage has been measured. The dielectric constant of AlON has been calculated from the slope of the plot of capacitance versus capacitor area. The value of 11 has been obtained from this study. This depends on the composition of the AlON material, which is analyzed by Auger electron spectroscopy. © 2008 Elsevier Ltd. All rights reserved.
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Nanocrystal-ZnO thin film deposition by a novel reactive gas-timing RF magnetron sputtering provided for UV photodetectors
(2010-02-05)
Panprom, P.
;
Porntheeraphat, S.
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Bunjongpru, W.
;
Tiwawong, T.
;
Yamwong, W.
The fabrication and characterizations of nanocrystal-ZnO thin film used as active layer of MSM-photodetector structure are reported. The ZnO thin film were successfully sputtered on SiO<inf>2</inf>/Si substrates without heating or annealing processes by using a novel reactive gas-timing technique. In our experiment, the ZnO thin film properties with different gas-timing ratio of Ar/O<inf>2</inf> were investigated. For fabricating of UV detector, the Al interdigitate electrode was deposited on SiO<inf>2</inf>/Si substrate by DC sputtering process and ZnO thin film was deposited as active layer. The response wavelength peak occurs at around 380 nm corresponding to ZnO energy bandgap of 3.2 eV .The I-V measurements indicates the Schottky behavior of ZnO on Al contact. © (2010) Trans Tech Publications.
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On-chip platinum micro-heater with platinum temperature sensor for a fully integrated disposable PCR module
(2010-02-05)
Sripumkhai, W.
;
Lekwichai, A.
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Bunjongpru, W.
;
Porntheeraphat, S.
;
Tunhoo, B.
The on-chip platinum micro-heater prototypes for thermal cycling equipped with platinum temperature sensor are fabricated. The device has been designed, fabricated and characterized to explore the feasibility of the micro-heater for a fully integrated disposable lab-on-a-chip with the PCR module. The on-chip micro-heater demonstrates that the temperature transitions are shorter by comparison with the conventional PCR temperature routines. © (2010) Trans Tech Publications.
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Oxygen control on nanocrystal-AION films by reactive gas-timing technique R.F. magnetron sputtering and annealing effect
(2008-12-01)
Bunjongpru, W.
;
Pomtheeraphat, S.
;
Somwang, N.
;
Khomdet, P.
;
Hruanun, C.
The AlON films grown on Si(100) substrates by using radio frequency (r.f.) magnetron sputtering from high purity aluminum (99.999% Al) target with a novel reactive gas-timing technique. The 100 nm thick of AlON films were deposited with 200 watts r.f. power and the substrate temperature is maintained at room temperature by the technique of gas-timing which varying flow-in sequence of high purity of Ar (99.999%) and N<inf>2</inf> (99.9999%) gases fed into the sputtering chamber at 10:90 (sec) ratio. The composition and crystal orientation of AlON films affected by gas-timing of Ar and N<inf>2</inf> were analyzed by Auger Electron Spectroscopy (AES) and Xray diffraction (XRD). The oxygen atoms revealed by AES formed into a corporation in films was studied. This suggests that the oxygen contamination formed as A10<inf>x</inf>N<inf>y</inf> compound may due to the residual oxygen in base pressure of 10<sup>-7</sup> mbar and higher reactivity of oxygen in the reactor compared to nitrogen. The gas-timing technique used in the sputtering growth system shows the advantage of the oxygen quantity control, while the general sputtering process (without gas-timing technique) shows an increase of the oxygen composition depended on film thickness. The characterizations results clearly indicate that the gas-timing r.f. magnetron sputtering technique plays an important role to control the incorporation of oxygen and to form the nanocrystalaluminum oxynitride films which very attractive for various sensors applications. © 2008 Trans Tech Publications, Switzerland.
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An extreme change in structural and optical properties of indium oxynitride deposited by reactive gas-timing RF magnetron sputtering
(2008-09-30)
Sungthong, A.
;
Porntheeraphat, S.
;
Poyai, A.
;
Nukeaw, J.
The indium oxynitride (InON) films were achieved by reactive RF magnetron sputtering indium target which has the purity of 99.999% with a novel reactive gas-timing technique. The structural, optical and electrical properties in a series of polycrystalline InON films affected by gas-timing of reactive N <inf>2</inf> and O <inf>2</inf> gases introduced to the chamber were observed. The X-ray photoelectron spectroscopy revealed that the oxygen content in thin films that compounded to indium and nitrogen, which increased from 10% in indium nitride (InN) to 66% in indium oxide (In <inf>2</inf> O <inf>3</inf> ) films. The X-ray diffraction peaks show that the phase of deposited films changes from InN to InON and to In <inf>2</inf> O <inf>3</inf> with an increasing oxygen timing. The hexagonal structure of InN films with predominant (0 0 2) and (0 0 4) orientation was observed when pure nitrogen is only used as sputtering gas, while InON and In <inf>2</inf> O <inf>3</inf> seem to demonstrate body-center cubic polycrystalline structures depending on gas-timing. The surface morphologies investigated from atomic force microscope of deposited films with varying gas-timing of O <inf>2</inf> :N <inf>2</inf> show indifferent. The numerical algorithm method was used to define the optical bandgap of films from transmittance results. The increasing oxygen gas-timing affects extremely to the change of crystallinity phase from InN to InON and to In <inf>2</inf> O <inf>3</inf> , the increase of optical bandgap from 1.4 to 3.4 eV and the rise of sheet resistance from 15 Ω/□ to insulator. © 2008 Elsevier B.V. All rights reserved.

Nukeaw, Jiti

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