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Photocurrent study of erbium delta-doped InP grown by organometallic vapor phase epitaxy
Author(s)
Date Issued
November 20, 2002
Type
Conference Paper
Abstract
The photocurrent of erbium delta-doped InP grown by organometallic vapor phase epitaxy was observed at room temperature. The clear PC spectra of the doped samples reflect the high quality formation of ErP quantum structure in InP. The PC spectra of doped samples with different Er exposure duration show that the total number of ErP islands increase with increasing exposure time, reflected in the sharper PC spectra. When applying an electric field, the spectra of the doped sample exhibit significant shift with increasing field.
Citation
International Journal of Modern Physics B, 16(28-29), 4436-4440, 2002