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Grounded FDNC and FDNR realizations based on Gm-C technique and their applications to ladder filter design
Author(s)
Date Issued
January 1, 2016
Type
Article
Abstract
A simple circuit for the realization of the grounded frequency-dependent negative conductance (FDNC) using active transconductance (Gm) elements is discussed. Based on the realized FDNC as a fundamental circuit element, the frequency-dependent negative resistances (FDNR) can also be obtained. The equivalent values of the realized elements can be adjusted electronically by means of the transconductance parameters. Both simulator circuits do not require the component-matching condition, and enjoy employing only Gm-cells together with two grounded capacitors; accordingly, they are canonical structures and convenient for integration. Simulation results with TSMC 0.35-μm CMOS technology are presented to validate the characteristics of the realized simulator circuits and their applications.
Citation
Engineering Letters, 24(3), 263-267, 2016