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Study on temperature effect on p-n and Zener junction for PTAT temperature sensor
Author(s)
Date Issued
October 6, 2008
Type
Conference Paper
Abstract
Research on a new compact BJT PTAT temperature sensor structure has been reported. The zener junction-connected BJT transistor and Base-Emitter voltage of transistor can be temperature dependent. The performance of new compact PTAT circuit can be improved by using difference in thermal characteristics between p-n and zener junction. ΔV/ΔT can be further increased by connecting p-n and zener junction in series. The results show that ΔK/ΔT of the circuit increased by 6.77 timed or 85% compared with conventional PTAT and connecting two p-n and zener junction in series. The result show that ΔK/ΔT of the circuit increased by 3.3 timed or 70%compared with proposed circuit the output voltage is large enough so that it can be used directly without additional amplifier. This also improves S/N ratio and the unique linearity of PTAT is still preserved. The working temperature of circuit is between -60°C to 160°C © 2008 IEEE.
Citation
5th International Conference on Electrical Engineering Electronics Computer Telecommunications and Information Technology Ecti Con 2008, 2, 785-788, 2008