Rational concept for fully designing metal-oxynitride films through reactive gas-timing magnetron sputtering: A case study on zinc oxynitride film

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2025-7-15

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Journal of Alloys and Compounds

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ZnO doping and properties, Semiconductor materials and devices, Ga2O3 and related materials

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https://dspace.kmitl.ac.th/handle/123456789/16576

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