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Formation of HfOxNy nanorod GLAD films growth by rapid thermal oxidation
Formation of HfOxNy nanorod GLAD films growth by rapid thermal oxidation
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Date
2022-10-1
Authors
Wuttichai Phae-ngam
Jedsada Prathumsit
Chanunthorn Chananonnawathorn
Hideki Nakajima
Tossaporn Lertvanithphol
Tawee Pogfay
Nutthamon Limsuwan
D. Phokharatkul
Athorn Vora–ud
Narit Triamnak
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Journal Title
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Volume Title
Publisher
Vacuum
Abstract
Description
Keywords
Semiconductor materials and devices
,
Ga2O3 and related materials
,
ZnO doping and properties
Citation
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https://dspace.kmitl.ac.th/handle/123456789/18179
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