The Study of Fabricated N-Type Diamond for Hall Sensor by Hot Filament Chemical Vapor Deposition (HFCVD) Method

In this research, the study of fabricated n-type diamond for Hall sensor by hot filament chemical vapor deposition (HFCVD) method is presented. The fabricated n-type diamond film doped with phosphorus in ethanol (C2H5OH) at P/C ratio of 10,000 ppm was synthesis on silicon substrate at 750 °C for 12 hours. Its morphology, crystallinity and types of carbon were analyzed using optical microscope and Raman spectroscope. The structure of n-type diamond for Hall Sensor comprises of four silver paste electrodes on the surface of the fabricated n-type diamond film. An electrical property of electrode, Ohmic, was tested on the fabricated silver paste electrodes. The impact of temperature on the fabricated n-type diamond for Hall sensor was evaluated. The operating temperature as high as 240 °C was observed. Magnetic response characteristic of the fabricated n-type diamond was measured. The absolute sensitivity of 9 µV/Gauss was observed. Properties of the fabricated n-type diamond for Hall sensor under operation were measured. The electrical density is 1.82 x 10¹⁵ cm^-3, electrical resistance is 5.443 ?·cm and electrical mobility is 630 cm²/v-sec.