The study of trivalent-dopants effect on electrical properties of the BaZr0.7In0.3O3-δ system

Abstract

Perovskite BaZrO3 and BaZr0.7In0.3O3-δ (BZI) ceramics were prepared via solid-state reaction. The crystal structure, dielectric and electrical properties of these ceramics were analyzed comparatively. Rietveld analysis indicated that BaZrO3 and BaZr0.7In0.3O3-δ (BZI) have cubic symmetry with the Pm (Formula presented.) m space group. A small amount of In2O3 was observed in the BZI ceramic. The lattice parameter (a) decreased when a small amount of In3+ was added. The relative permittivity εr(T) and tan δ(T) of BZ and BZI ceramics behaved as plateaus that were independent of frequency and temperature in a temperature range of below 150 ̊C and 50 ̊C, respectively, which ascribed to the intrinsic dielectric properties resulting from electronic and/or ionic polarization. By increasing the temperature further, both ceramics exhibited colossal dielectric constant (CDC) behavior. Conductivity was greater with increasing temperature, which corresponded to Arrhenius behavior. Activation energies were calculated as 0.522 and 0.620 eV for the BZI and BZ system, respectively.

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Keywords

Proton-conducting perovskite, Rietveld refinement, trivalent-doped barium zirconate

Citation

Integrated Ferroelectrics, 195(1), 109-118, 2019

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