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Hole doping through indium intercalation into nickel phthalocyanine
Author(s)
Prajuabwan, Pakorn
Rojanasuwan, Sunit
Chanhom, Annop
Jaruvanawat, Anuchit
Date Issued
April 29, 2013
Type
Conference Paper
Abstract
A new intercalation of indium and nickel phthalocyanine(NiPc) thin films is developed by using thermal co-evaporation technique. X-ray diffractometer(XRD) and optical absorption spectroscopy of In-doped NiPc suggest the crystal structure of In-doped NiPc is α-phase as same as that of pristine NiPc. Current-voltage characteristic of Shottky diode fabricated with In-doped NiPc thin film shows the enhancement of charge carrier concentration due to indium doping. Further photoelectron spectroscopy experiments prove that In-doped NiPc is hole transport material. © (2013) Trans Tech Publications, Switzerland.
Citation
Applied Mechanics and Materials, 313-314, 148-156, 2013