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Influence of gas source supply interruption on quantum well structure of few monolayer InP/In0.53Ga0.47As/InP grown by OMVPE
Author(s)
Date Issued
January 1, 2002
Type
Conference Paper
Abstract
A model of asymmetric stepped quantum well affected by gas source supply interruption at the interface of extremely thin InP/In0.53Ga0.47As/InP single quantum well grown by Organometallic Vapor Phase Epitaxy (OMVPE) is developed. The energy levels in the well and the intersubband transition energies are carried out and compared to experimental data from photoreflectance spectroscopy.
Citation
Proceedings of the IEEE International Conference on Industrial Technology, 2, 1368-1371, 2002