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Study on optical and electronic properties of Sn-doped ZnPc
Author(s)
Sributr, Chaloempol
Rojanasuwan, Sunit
Date Issued
October 29, 2013
Type
Conference Paper
Abstract
Sn doped ZnPc films were deposited on intrinsic Si and glass substrates by organic source thermal co-evaporation technique with different deposition rates. Optical properties and electronic structure were characterized by UV-Vis spectroscopy and X-ray photoelectron spectroscopy (XPS) respectively. The UV-Vis results showed that phase transition of ZnPc from α- phase to β-phase occurred when Sn:ZnPc deposition rate is 0.3:0.7 or higher. XPS results indicated that the outer s electron of Sn atom is transferred to the ZnPc. Broadening of the C 1s spectra is observed with the increasing of Sn deposition rate. This broadening corresponds to the change of molecular environment surrounding carbon atoms in the Sn-doped ZnPc films. © (2013) Trans Tech Publications, Switzerland.
Citation
Advanced Materials Research, 802, 204-208, 2013