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Frictional heat-assisted performance enhancement in dynamic Schottky contact of Al/Ag2Se-based tribovoltaic nanogenerator
(2025-01-01)
Worathat, Supakarn
;
Pharino, Utchawadee
;
Pakawanit, Phakkhananan
;
Rattanachata, Arunothai
;
Muanghlua, Rangson
The tribovoltaic nanogenerator (TVNG) has evolved in recent years as a novel type of nanogenerator designed to address the limitations of the standard triboelectric nanogenerator in terms of output signal and charge generation. Besides the outstanding characteristics, the tribovoltaic effect can also well be coupled with another effect to further boost the output performance. In this work, we proposed firstly a frictional heat-assisted performance enhancement in dynamic Schottky contact from the rubbing between n-type silver selenide (Ag<inf>2</inf>Se) and aluminum. The chemical composition and physical characteristics of the Ag<inf>2</inf>Se ceramic were analyzed using X-ray diffraction, scanning electron microscopy, and Synchrotron X-ray tomography techniques. UV–Vis spectroscopy and UPS were also utilized in order to validate the semiconducting property of the n-type Ag<inf>2</inf>Se ceramic. Moreover, the presence of the Schottky junction was demonstrated through the analysis of the current-bias voltage characteristic curve of the Ag<inf>2</inf>Se/aluminum (Al) contact under varying stress and temperature conditions. The built-in electric field plays a crucial part in the tribovoltaic effect by efficiently transferring the excited carriers to an external load through sliding contact between Ag<inf>2</inf>Se and Al. Demonstrating the synergy between tribovoltaic and thermoelectric effects becomes achievable through the excellent thermoelectric property of Ag<inf>2</inf>Se. Herein, the proposed TVNG generated a peak output voltage and current of around 0.7 V and 24.8 nA, respectively, achieving a maximum output power of 12.6 nW at a load resistance of 10 kΩ. The influence of frictional heat on the output performance of the proposed TVNG was well demonstrated by the thermal-induced voltage and enhanced electrical output from continuous sliding. The concepts given in this study establish the basis for the progress of effective energy collection employing semiconducting materials and the advancement of flexible harvesting and sensing device development in the future.
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The study of forward and reverse schottky junction for dual magnetodiode
(2012-06-01)
Phetchakul, T.
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Luanatikomkul, W.
;
Yamwong, W.
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Poyai, A.
This paper presents schottky diode for sensing magnetic field. The structure is the same as dual magnetodiode that had been reported by the same group. The device can operate both in forward and reverse biasing for magnetic field device. The sensitivity (ΔV <inf>o</inf>/ΔB) by simulation of forward bias is 0.8 mV/T at the current 1.93 μA and reverse bias is 6 nV/T at the current 13.49 pA. Two modes of operation show linearity which electron is the only type of carrier. The mechanism of forward and reverse modes of operation are described. © 2012 IEEE.
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The study of p-n and schottky junction for magnetodiode
(2012-01-01)
Phetchakul, Toempong
;
Luanatikomkul, Wittaya
;
Leepattarapongpan, Chana
;
Chaowicharat, Ekalak
;
Pengpad, Putapon
This paper presents the simulation model of Dual Magnetodiode and Dual Schottky Magnetodiode using Sentaurus TCAD to simulate the virtual structure of magneto device and apply Hall Effect to measure magnetic field response of the device. Firstly, we use the program to simulate the magnetodiode with p-type semiconductor and aluminum anode and measure electrical properties and magnetic field sensitivity. Simulation results show that sensitivity of Dual Schottky magnetodiode is higher than that of Dual magnetodiode.
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