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The MSM diamond device for direct and indirect X-ray detection
(2015-07-01)
Cheirsirikul, S.
;
Jesen, S.
;
Hruanun, C.
Development synthesizing diamond film on silicon substrate was processed by Hot Filament Chemical Vapor Deposition (HFCVD). The gas processes using of H<inf>2</inf> and CH<inf>4</inf> to produce intrinsic diamond and MSM device constructed on the diaphragm of diamond film. Schottky junctions on the top and the lower diaphragm were produced by aluminum metal. After that, the result of detecting a direct and indirect X-ray of MSM diamond was satisfactory because it could respond along with increasing of X-ray intensity. The X-ray expose time of indirect expose by BaF<inf>2</inf> scintillator faster more than direct expose.
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The vertical MSM diamond X-ray detector
(2012-06-01)
Cheirsirikul, S.
;
Jesen, S.
;
Hruanun, C.
Development synthesizing diamond film on (100) silicon substrate was processed by HFCVD (Hot Filament Chemical Vapor Deposition). The processes consisted of using methane (CH <inf>4</inf>) to produce intrinsic diamond and built MSM device on the diamond film. The top and the bottom of diamond is Schottky junctions were produced by aluminum which caused the carriers were able to move in the vertical direction to reduce the effect of grain boundaries. After that, the result of detecting an X-ray of MSM diamond was satisfactory because it could respond along with increasing of intensity of an X-ray and X-ray expose time. © 2012 IEEE.
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MSM diamond UV detector
(2011-10-04)
Cheirsirikul, S.
;
Jesen, S.
;
Hruanun, C.
Development Synthesizing Diamond film on (100) silicon substrate was processed by HFCVD (Hot Filament Chemical Vapor Deposition). The processes consisted of using methane (CH4) to produce intrinsic diamond and then constructing MSM device on the diaphragm of diamond film. Schotthy junctions on the top and the lower of the diaphragm were produced by aluminum which caused the carriers were able to move in the vertical direction to reduce the effect of grain boundaries. Then, the spectral response was investigated for the light wavelength in the range of 190 nm to 800 nm. The results showed that the device had good response to UV light and very low response to visible light. After that the device was sintered at 450OC in different times in order to find the decreased leakage current and proper response time. © 2011 IEEE.
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SiO2-Multiwalled carbon nanotube base gas sensor
(2008-12-01)
Jesen, S.
;
Ruangphet, S.
;
Cheirsirikul, S.
The gas sensors are fabricated from multiwalled carbon nanotube-based. The electrode is constructed from platinum (Pt) and titanium (Ti). The gas sensors are used for detecting oxygen (O<inf>2</inf>), ethyl alcohol (C <inf>2</inf>H<inf>5</inf>OH) and ammonia (NH<inf>3</inf>) by measuring the charge of their electrical capacitance. In the ratio silicon dioxide (SiO <inf>2</inf>) : carbon nanotube (MWCNTs) = 100:1 by weight, the electrical capacitance of the film layer has changed at the highest rate. The response of oxygen with concentration of 10,000 ppm, 20% of ethyl alcohol and 20% of ammonia, it is found that the electrical capacitance of thin layer has change about 34%, 60% and 70%. © 2008 Trans Tech Publications, Switzerland.
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Photoconductor diamond film detector
(2008-10-06)
Jesen, S.
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Thaiyotin, L.
;
Cheirsirikul, S.
;
Phetchakul, T.
Diamond film was synthesized on a silicon substrate by MPCVD (Microwave Plasma Chemical Vapor Deposition) process and used to fabricate a photoconductor for the detection of UV light. The photoconductor was fabricated on free standing diamond film and operation in a planar. This paper presents the spectral response of photoconductor, concentration of boron doping, times and temperature. The device shows good response to UV light and a very low response to visible light. Furthermore, the device reveals little change in spectral response with increasing temperature at all wavelengths. © 2008 IEEE.
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UV photodetector from Schottky diode diamond film
(2002-03-01)
Thaiyotin, L.
;
Ratanaudompisut, E.
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Phetchakul, T.
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Cheirsirikul, S.
;
Supadech, S.
Diamond film was synthesized on a silicon substrate by hot-filament CVD and used to fabricate a Schottky photodiode for the detection of UV light. This paper presents an improved structure of photodiode, which reduces the effect of grain boundaries in the polycrystalline diamond film. The Schottky photodiode was fabricated on free-standing diamond film and operation in a vertical direction can be expected to reduce the effect of grain boundaries. The device shows good response to UV light and a very low response to visible light. The dark current is less than 10 pA. The device response time is less than 20 μs. Furthermore, the device reveals little change in spectral response with increasing temperature at all wavelengths. © 2002 Elsevier Science B.V. All rights reserved.
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Study of silicon thermopile
(2000-12-01)
Muanghlua, R.
;
Cheirsirikul, S.
;
Supadech, S.
This research paper introduces a silicon thermopile sensor, which shows higher Seebeck coefficient than a metal thermopile sensor. The vacuum evaporation technique was used to fabricate this silicon-based thermopile with Titanium as parts of the sensor. By using the concept that different of temperature between junctions would induce voltage that corresponse to the temperature different and materials used for the device. This work starting from design, fabricate, and test the device. At the ends of this work, we successfully fabricated the sensor and tested. The results show that the sensor demonstrate higher Seebeck coefficient than the one from metal-base thermopile sensor. For the future work, the different materials will be used to fabricate the thermopile sensor and compared to the Seebeck coefficient of the one from silicon.
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UV photodetectors from B-doped diamond film
(2000-12-01)
Thaiyotin, L.
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Phetchakul, T.
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Cheirsirikul, S.
;
Supadech, S.
The diamond film synthesized on silicon substrate by hot-filament CVD has been used to fabricate photoconductive and photodiode structures for the detection of UV light. The photoconductive device which the higher boron doped has a greater different response between UV light and visible light more than the lower one, but it has more dark current and response time. The Al schottky photodiode fabricated on the B-doped diamond film showed lower dark current and shorter response time than photoconductive device.
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