KMITL

Permanent URI for this communityhttps://dspace.kmitl.ac.th/handle/123456789/1

Browse

Settings

Author: search.filters.author.Pamonchom, ChanvitSubject: search.filters.subject.Magnetic sensor

Search Results

Now showing 1 - 2 of 2
  • Loading...
    Thumbnail Image
    Some of the metrics are blocked by your 
    consent settings
    Item type:Publication,
    MAGFinFET: The channel length effect
    (2020-07-01)
    Phetchakul, Toempong
    ;
    Pamonchom, Chanvit
    ;
    Poyai, Amporn
    This paper studies the channel length effect on MAGFinFET. It is a new magnetic device which its structure is FinFET in nanometer scale. It detects vertical magnetic field like as MAGFET. The parameter is channel length of n channel FinFET which is varied at 10, 20, 30, 40 and 50 nm. The sensitivities at biased current 100 μA of varied channel length are 182.49, 186.41, 190.65, 197.22 and 201.00 nA/T, respectively. It depends linearly on the length of MAGFinFET like as MAGFET in micrometer scale. By comparing with bulk fin channel with the concentration 1015 cm-3, the sensitivity of MAGFinFET and fin resistor at biased current 100 μA are 190.65 and 153.50 nA/T, respectively. The current deflection of induced channel of FinFET is more sensitive than bulk resistor channel in same condition. The induced charges can deflect freely pass through depletion layer in thin fin channel by induced magnetic force not less than or better than in bulk resistor channel.
  • Loading...
    Thumbnail Image
    Some of the metrics are blocked by your 
    consent settings
    Item type:Publication,
    Magnetic finfet (MAGFinFET)
    (2019-07-01)
    Pamonchom, Chanvit
    ;
    Nakachai, Rattapong
    ;
    Sutthinet, Chalin
    ;
    Poyai, Amporn
    ;
    Phetchakul, Toempong
    This paper presents magnetic sensor that uses FinFET structure. It is n channel FinFET with two separate contacts on the fin sides of drain that detects the vertical magnetic field. The gate length, fin height and fin width are 15, 15 and 5 nm, respectively. The device operates by Lorentz's force induced by magnetic field crossed perpendicular with drain current. It acts upon drain current and creates the drain differential current. The linearly dependence shows the sensitivity 181.6 nA/T, at current 1 mA. MAGFinFET is a low power and low voltage magnetic field sensor.