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Author: search.filters.author.Poonsawat, Sawatdipong

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    The Gapless Design for High Sensitivity of Current Mode Dual Magnetodiode
    (2019-04-26)
    Sutthinet, Chalin
    ;
    Poonsawat, Sawatdipong
    ;
    Phetchakul, Toempong
    ;
    Poyai, Amporn
    This paper presents the design for high sensitivity of magnetic detector device in current mode that uses Lorentz's force deflects current depend on the magnetic density via the dual magnetodiode structure. The current mode devices have two symmetry regions for carrier current receiving that injected from another opposite region. This design has a gap between two carrier current receiving regions that causes some loss and reduce sensitivity. The proposed design has one carrier current receiving region or gapless design that has no loss from gap. The sensitivities of gap 5, 2.5 and 0 μm at 1 mA are 0.0010, 0.0028 and 0.0065 T<sup>-1</sup> for split cathode structure and 0.00084, 0.0020 and 0.0051 T<sup>-1</sup> for split anode structure, respectively. This design can be applied to all current mode magnetic device for high sensitivity.
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    Horizontal Magnetic Field MAGFET by Conventional MOSFET Structure
    (2018-07-02)
    Nakachai, Rattapong
    ;
    Poonsawat, Sawatdipong
    ;
    Sutthinet, Chalin
    ;
    Ruangphanit, Anucha
    ;
    Poyai, Amporn
    The MOSFET used as magnetic field sensor is presented. It is a conventional structure that has a source, a gate, a drain and a substrate or body terminal which fabricated by standard CMOS process. It detects the horizontal y-direction magnetic field in parallel and perpendicular to currents. The device is biased for channel current and substrate current. The mechanism is Hall Effect in current mode. The induced Lorentz's force deflects currents between drain current and substrate forward current causes output differential current. The relation shows linearly dependence between magnetic field density and output differential current. The relative sensitivity depends on amount of bias currents.
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    Simulation of MOSFET as horizontal magnetic MOSFET (MAGFET)
    (2017-12-14)
    Nakachai, Rattapong
    ;
    Phetchakul, Toempong
    ;
    Poonsawat, Sawatdipong
    ;
    Poyai, Amporn
    This work proposes the regular long channel MOSFET structure used as magnetic MOSFET (MOSFET that can detect magnetic field) in parallel direction (y-axis). The structure is regular MOSFET that has drain, gate, source and substrate (body). The mechanism of device is Hall effect in current mode between channel MOSFET current and substrate current in x-axis direction. The dimensions of channel MOSFET are 20 μm wide and 20 μm long. The channel and substrate currents are balance adjusted in the same values at 0.5, 1 and 1.5 mA. From the simulation results by TCAD sentaurus, the relative sensitivity of device is 0.01 T<sup>-1</sup> in y and - y direction, respectively. It can be used as magnetic sensor for one dimension in parallel field.
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    Effect of substrate depth to 5-contact vertical hall
    (2017-11-03)
    Poonsawat, Sawatdipong
    ;
    Phetchakul, Toempong
    ;
    Poyai, Amporn
    We studied the flve-contact vertical Hall device using TCAD at various depth of substrate. Two main mechanisms of Hall voltage are induced voltage from Lorentz's force and differential current. At low depth, the percentage of voltage from Lorentz's force is much greater than the voltage from differential current. The depth does not only affect Hall voltage by Lorentz's force but also affect contact differential current. The Hall voltage and sensitivity of device are increased with substrate depth until the critical value. The sensitivity of device is saturation when the substrate depth is more than 70 μm. The output voltage from differential current is 45% of overall output voltage at saturation condition.
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    The effect of deviation current to 5-contacts vertical Hall device
    (2016-09-06)
    Phetchakul, Toempong
    ;
    Poonsawat, Sawatdipong
    ;
    Poyai, Amporn
    This paper presents the new model of 5-contacts vertical Hall device. Despite of the induced force from Hall electric field act upon the current along the contacts for induced Hall voltage, there are some deviation currents from the middle contact that contribute the Hall voltage. The deviation current pass through the bulk resistance causes the voltage drop between the voltage contacts. From this study for n-type substrate, the deviation current created voltage about 20-30 percent of the total Hall voltage that mean it is the importance mechanism for vertical Hall device. This study used 3-D simulation by Sentaurus TCAD.