Search Results

Now showing 1 - 5 of 5

Some of the metrics are blocked by your
consent settings
Magnetic TFET (MAG-TFET)
(2022-01-01)
Boonlua, Thanet
;
Poyai, Amporn
;
Phetchakul, Toempong
This paper presents a new structural magnetic field sensor device. The device structure uses the basic structure of tunneling field effect transistor (TFET). The mechanism uses the current-mode Hall phenomenon with tunneling electron carriers from source to drain. The device structure consists of source, gate and drain with two separate contacts on both sides D1 and D2 to accommodate the amount of current difference (ID) caused by Lorentz's force deflection. The study is carried out by using TCAD simulation. The magnetic field intensity response is linearly dependence. The sensitivity depends on the amount of current and magnetic field intensity. The sensitivity (S) obtained by this device which has width (Fw) 5 nm, length (Lg) 100 nm and height (Fh) 5 nm at biased current of 1000, 100, 10, 1 µA are 0.0133, 0.0263, 0.0812 and 1.22 µA.T-1 respectively. From this experiment, the best relative sensitivity (SR) is 0.000812 T-1 at 100 µA.
Some of the metrics are blocked by your
consent settings
Novel MAGFinFET: Operation, Design and Geometry Effect for Modern Sensors
(2022-01-01)
Swe, Khine Thandar Nyunt
;
Pamonchom, Chanvit
;
Poyai, Amporn
;
Phetchakul, Toempong
This paper presents a new magnetic detection device, MAGFinFET, which is based on the advanced 3D FinFET structure. It can measure the vertical magnetic field by designing two contacts on both sides of the drain. The operation uses the principle of the current mode of Hall effect causing the deflection of the drain currents at both contacts. The 3D geometry effect was studied: channel length, fin height and fin width. It can be seen that when the values of these parameters are increased, the differential currents and relative sensitivities are increased linearly. Relative sensitivity has the highest value 0.00201 T-1 at channel length 50 nm. Fin height and fin width of 50 nm give the highest sensitivity of 0.00468 T-1 and 0.00415 T-1 respectively. Current density distributions of the different variations of each parameter Lg, Fh and Fw are observed by applying vertical magnetic field on the device. The 3D-MAGFinFET has been compared to that of the 2D non-split drain MAGFET structure and bulk fin resistor that use n-type semiconductor instead of induction channel. MAGFinFET shows quite higher sensitivity compared to bulk fin resistor. MAGFinFET mechanism models and simple characteristic equations are proposed in this work. Sentaurus TCAD is used for the device structure and simulation for the characteristics ofMAGFinFET. This FinFET based device can be fabricated with modern integrated circuit technology.
Some of the metrics are blocked by your
consent settings
MAGFinFET: The channel length effect
(2020-07-01)
Phetchakul, Toempong
;
Pamonchom, Chanvit
;
Poyai, Amporn
This paper studies the channel length effect on MAGFinFET. It is a new magnetic device which its structure is FinFET in nanometer scale. It detects vertical magnetic field like as MAGFET. The parameter is channel length of n channel FinFET which is varied at 10, 20, 30, 40 and 50 nm. The sensitivities at biased current 100 μA of varied channel length are 182.49, 186.41, 190.65, 197.22 and 201.00 nA/T, respectively. It depends linearly on the length of MAGFinFET like as MAGFET in micrometer scale. By comparing with bulk fin channel with the concentration 1015 cm-3, the sensitivity of MAGFinFET and fin resistor at biased current 100 μA are 190.65 and 153.50 nA/T, respectively. The current deflection of induced channel of FinFET is more sensitive than bulk resistor channel in same condition. The induced charges can deflect freely pass through depletion layer in thin fin channel by induced magnetic force not less than or better than in bulk resistor channel.
Some of the metrics are blocked by your
consent settings
Magnetic finfet (MAGFinFET)
(2019-07-01)
Pamonchom, Chanvit
;
Nakachai, Rattapong
;
Sutthinet, Chalin
;
Poyai, Amporn
;
Phetchakul, Toempong
This paper presents magnetic sensor that uses FinFET structure. It is n channel FinFET with two separate contacts on the fin sides of drain that detects the vertical magnetic field. The gate length, fin height and fin width are 15, 15 and 5 nm, respectively. The device operates by Lorentz's force induced by magnetic field crossed perpendicular with drain current. It acts upon drain current and creates the drain differential current. The linearly dependence shows the sensitivity 181.6 nA/T, at current 1 mA. MAGFinFET is a low power and low voltage magnetic field sensor.
Some of the metrics are blocked by your
consent settings
Horizontal Magnetic Field MAGFET by Conventional MOSFET Structure
(2018-07-02)
Nakachai, Rattapong
;
Poonsawat, Sawatdipong
;
Sutthinet, Chalin
;
Ruangphanit, Anucha
;
Poyai, Amporn
The MOSFET used as magnetic field sensor is presented. It is a conventional structure that has a source, a gate, a drain and a substrate or body terminal which fabricated by standard CMOS process. It detects the horizontal y-direction magnetic field in parallel and perpendicular to currents. The device is biased for channel current and substrate current. The mechanism is Hall Effect in current mode. The induced Lorentz's force deflects currents between drain current and substrate forward current causes output differential current. The relation shows linearly dependence between magnetic field density and output differential current. The relative sensitivity depends on amount of bias currents.

KMITL

Browse

Filters

Settings

Sort By

Results per page

Search Results