KMITL

Permanent URI for this communityhttps://dspace.kmitl.ac.th/handle/kmitl/1

Browse

Settings

Author: search.filters.author.Yamwong, W.Subject: search.filters.subject.Magnetoresistance effect

Search Results

Now showing 1 - 2 of 2
  • Loading...
    Thumbnail Image
    Some of the metrics are blocked by your 
    consent settings
    Item type:Publication,
    Contributing parameters for magnetoresistance effect of the new design on Hall plate structure
    (2013-09-02)
    Phetchakul, T.
    ;
    Taisettavatkul, P.
    ;
    Yamwong, W.
    ;
    Poyai, A.
    This paper presents the parameters which contribute magnetoresistance effect of the new design on Hall plate structure when it is compared with series resistance structure. The new design is designed with rectangular aluminum ring surrounding on Hall plate. It creates zero Hall voltage area which the carriers move and deflect freely. The new and classical designs have percentage of magnetoresistance effect about 20% at doping concentration 2×10 <sup>15</sup>cm<sup>-3</sup>, temperature 300K at magnetic field 3 Tesla when classical one has metal space about 10 μm. The new design one is easier design than the classical series resistance and has no effect of metal space. Parameters which are used in this experiment are silicon and gallium arsenide at doping concentration 2×10<sup>14</sup>, 2×10<sup>15</sup> and 2×10<sup>16</sup> at temperature 200, 250 and 300K with Sentaurus TCAD program for simulation. The new design has the percentage of magnetoresistance effect much higher up to 906% over than the classical series resistance when it is designed with high mobility material, low doping concentration and low temperature. © 2013 IEEE.
      1
  • Loading...
    Thumbnail Image
    Some of the metrics are blocked by your 
    consent settings
    Item type:Publication,
    The new design for magnetoresistance effect on hall plate structure
    (2012-10-02)
    Phetchakul, T.
    ;
    Taisettavatkul, P.
    ;
    Pengchan, W.
    ;
    Yamwong, W.
    ;
    Poyai, A.
    This paper presents the new design which contributes to magnetoresistance effect on Hall plate by compared with series resistance structure by Sentaurus TCAD program. A new design creates zero Hall voltage area which the carriers move and deflect freely. The Hall plate structure is n-type silicon with 400 μm length, 100 μm width and 1 μm thickness. Both designs have percentage of magnetoresistance effect about 20% at doping concentration 2×10 <sup>15</sup>cm <sup>-3</sup>, temperature 300K at magnetic field 3 Tesla. A new design on Hall plate structure is easier than the classical series resistance and has no effect of metal space which is in series resistance structure. © 2012 IEEE.