KMITL

Permanent URI for this communityhttps://dspace.kmitl.ac.th/handle/123456789/1

Browse

Search Results

Now showing 1 - 7 of 7

Some of the metrics are blocked by your
consent settings
Study of Sensitivity and Noise on Magnetic FinFET (MAG-FinFET)
(2023-01-01)
Swe, Khine Thandar Nyunt
;
Poyai, Amporn
;
Phetchakul, Toempong
Three dimensional FinFET device structure is proposed as magnetic device to detect the vertical magnetic field. The region of drain contact is split into two drain contacts and the MAG-FinFET has source contact, gate contact and two drain contacts. Lorentz's force appears as Hall effect when the magnetic field is exposed to the device perpendicularly. The imbalanced drain currents at the drain contact D1 and D2 caused by the expose of magnetic field are measured, and the Hall current is obtained as the output of MAG-FinFET. The relative sensitivities of MAG-FinFET with three channel lengths are calculated. Mixed mode AC analysis simulations are done by using Sentaurus TCAD to study the impact of noise on MAG-FinFET. The fluctuations at the output nodes of Mag-FinFET can be seen as noise voltage spectral density and noise current spectral density. The short channel length of 10 nm MAG-FinFET gives the highest differential drain current and shows the best sensitivity. The limitation of minimum magnetic field is determined from the noise current spectral density obtained at bandwidth 1 Hz to 1 kHz. For channel length 10 nm MAG-FinFET, the minimum magnetic field Bmin 76mTHz is obtained for narrow bandwidth at frequency 1 kHz. The equivalnet magnetic field Beq obtained for large frequency range is 1.28THz.
Some of the metrics are blocked by your
consent settings
Comparison of Carrier Deflection between MAG-TFET and MAG-FinFET
(2023-01-01)
Boonlua, Thanet
;
Poyai, Amporn
;
Phetchakul, Toempong
This paper is a comparison of the carrier deflection mechanism of a new magnetic sensor structure between the tunneling Field Effect Transistor (TFET) structure and the FinFET structures so-called MAG-TFET and MAG-FinFET.The device relies on carrier deflection from magnetically induced forces. The MAG-TFET current is caused by electron tunneling and drifting through the bulk under gate while the MAG-FinFET current is caused by the drift channel carrier from the inversion layer induced by gate voltages and there is also a bulk current beneath the substrate. The carrier deflection of the device is due to the current in the induced channel and current in the bulk. From the results, carrier deflection in the induced channel is better than in the bulk. The device sensitivity depends on the proportion of these two currents.
Some of the metrics are blocked by your
consent settings
Novel MAGFinFET: Operation, Design and Geometry Effect for Modern Sensors
(2022-01-01)
Swe, Khine Thandar Nyunt
;
Pamonchom, Chanvit
;
Poyai, Amporn
;
Phetchakul, Toempong
This paper presents a new magnetic detection device, MAGFinFET, which is based on the advanced 3D FinFET structure. It can measure the vertical magnetic field by designing two contacts on both sides of the drain. The operation uses the principle of the current mode of Hall effect causing the deflection of the drain currents at both contacts. The 3D geometry effect was studied: channel length, fin height and fin width. It can be seen that when the values of these parameters are increased, the differential currents and relative sensitivities are increased linearly. Relative sensitivity has the highest value 0.00201 T-1 at channel length 50 nm. Fin height and fin width of 50 nm give the highest sensitivity of 0.00468 T-1 and 0.00415 T-1 respectively. Current density distributions of the different variations of each parameter Lg, Fh and Fw are observed by applying vertical magnetic field on the device. The 3D-MAGFinFET has been compared to that of the 2D non-split drain MAGFET structure and bulk fin resistor that use n-type semiconductor instead of induction channel. MAGFinFET shows quite higher sensitivity compared to bulk fin resistor. MAGFinFET mechanism models and simple characteristic equations are proposed in this work. Sentaurus TCAD is used for the device structure and simulation for the characteristics ofMAGFinFET. This FinFET based device can be fabricated with modern integrated circuit technology.
Some of the metrics are blocked by your
consent settings
MAGFinFET: The channel length effect
(2020-07-01)
Phetchakul, Toempong
;
Pamonchom, Chanvit
;
Poyai, Amporn
This paper studies the channel length effect on MAGFinFET. It is a new magnetic device which its structure is FinFET in nanometer scale. It detects vertical magnetic field like as MAGFET. The parameter is channel length of n channel FinFET which is varied at 10, 20, 30, 40 and 50 nm. The sensitivities at biased current 100 μA of varied channel length are 182.49, 186.41, 190.65, 197.22 and 201.00 nA/T, respectively. It depends linearly on the length of MAGFinFET like as MAGFET in micrometer scale. By comparing with bulk fin channel with the concentration 1015 cm-3, the sensitivity of MAGFinFET and fin resistor at biased current 100 μA are 190.65 and 153.50 nA/T, respectively. The current deflection of induced channel of FinFET is more sensitive than bulk resistor channel in same condition. The induced charges can deflect freely pass through depletion layer in thin fin channel by induced magnetic force not less than or better than in bulk resistor channel.
Some of the metrics are blocked by your
consent settings
Magnetic finfet (MAGFinFET)
(2019-07-01)
Pamonchom, Chanvit
;
Nakachai, Rattapong
;
Sutthinet, Chalin
;
Poyai, Amporn
;
Phetchakul, Toempong
This paper presents magnetic sensor that uses FinFET structure. It is n channel FinFET with two separate contacts on the fin sides of drain that detects the vertical magnetic field. The gate length, fin height and fin width are 15, 15 and 5 nm, respectively. The device operates by Lorentz's force induced by magnetic field crossed perpendicular with drain current. It acts upon drain current and creates the drain differential current. The linearly dependence shows the sensitivity 181.6 nA/T, at current 1 mA. MAGFinFET is a low power and low voltage magnetic field sensor.
Some of the metrics are blocked by your
consent settings
Influence of Temperature to Electron Mobility on Top of Channel in 14 nm n-FinFET
(2017-01-01)
Patcharasardtra, Nuttapong
;
Pengchan, Weera
he temperature behavior that influential to the electron mobility on top surface in 14 nanometer FinFET channel. The Mobility could find on I-V characterizing simulation process and giving the result from the TCAD software by biasing on the FinFET structure with gate voltage at 1 volt and the drain-source voltage from 0 Volt to 1 Volt to obtain the saturation drain current from I-V characteristic. The Electron mobility was lowering by increasing the temperature from 303K (30°C) to 353K (80°C). This FinFET structure gave the I<inf>DS (Sat)</inf> about 29 µA and gave mobility at V<inf>DS</inf> = 0 Volt about 575 cm<sup>2</sup>/Vs, at V<inf>DS</inf> = 1 Volt, the mobility dramatically down to 3.4 cm<sup>2</sup>/Vs.
Some of the metrics are blocked by your
consent settings
Electrical characteristics of different gate geometry of FinFET
(2016-01-01)
Patcharasardtra, Nuttapong
;
Pengchan, Weera
This paper proposed to the electrical characteristics of difference gate geometry of FinFET. Four of difference gate structure have been designed and simulated by GTS Framework TCAD software which is simulation the characteristics of FinFET device include drain currentvoltage, threshold voltage and subthreshold swing. Then, the electrical characteristics was compared. From the result found that the drain current depend on gate geometry of FinFET. The largest gate geometry of FinFET device was the rectangle shape with gate width at 66 nm, IDS about 19.8 mA and VTH = 0.5 V and the smallest gate geometry, the triangle shape with gate width at 52 nm and give IDS about 8.5 mA and Vth = 0.5 V.

KMITL

Browse

Filters

Settings

Sort By

Results per page

Search Results