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Egg Defect Detection and Classification in Boiled Egg Industry with Surface Disturbance Removal on the Eggshell Based on Image Processing
(2025-01-01)
Chotchawalkul, Sasikan
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Chaipanya, Oraya
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Anuntachai, Anuntapat
In the boiled egg industry, quality inspection is typically conducted twice: before eggs are transported into the conveyor-based boiling system (before boiling), and after they exit the water-based cooling system prior to packaging (after cooling). These inspections are commonly carried out through human visual assessment, which demands substantial human resources and time. This paper presents an automated system for detecting and classifying defective eggs-such as those with cracks, dents, rough shells, and other surface anomalies-using image processing techniques. The system is designed to enhance the visibility of such defects while minimizing the impact of production-related surface disturbances, including water stains, reflections from the cooling process, and red stamps from imported eggs. The proposed system comprises two main approaches: (1) Defects Detection Method, which classifies eggs into two categories: intact and defective; and (2) Pixel Counting and Comparison Method, which classifies eggs into three categories: intact, cracked or dented, and exploded eggs. This system offers a practical and efficient solution for the egg processing industry, reducing reliance on human labor, minimizing inspection time, and lowering hardware requirements for industrial implementation.
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Defect distribution and yield analysis technique on silicon wafer
(2014-01-01)
Praepattarapisut, Warakorn
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Pengchan, Weera
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Phetchakul, Toempong
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Poyai, Amporn
This paper presents the defect distribution and yield analysis on silicon wafer. The generation and recombination lifetime were the key parameters and obtained from the current- voltage and the capacitance-voltage of diode characteristics for forward bias. Then 3D contour maps were plotted as defect distribution and can be analyzed for the whole wafer which is useful for the yield analysis of the defects that were caused from fabrication process. © (2014) Trans Tech Publications, Switzerland.
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Glass bottle inspection by using digital in-line holography
(2014-01-01)
Buranasiri, Prathan
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Plaipichit, Suwan
In this paper, the novel technique for investigating the quality of glass bottle by using digital in-line holography (DIH) has been proposed. In our experimental setup, the collimated beam of short coherent laser diode with wave length of 635 nm incident on a glass bottle. Then, the image bearing reflected beam consisted of quality profile of the glass bottle has been recorded on a CMOS camera. By using the experimental results and numerically reconstructed images, the defects inside the glass bottle can be detected and the curvature radius of the bottle has been found. Our technique may be used for glass bottle inspection in the glass bottle making industry.
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Power loss analysis based on leakage currentin PN junctions
(2013-10-04)
Pengchan, Weera
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Phetchakul, Toempong
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Poyai, Amporn
This paper is proposed to analyze the power loss from leakage current in p-n junctions in case of non-uniform defects. The different geometry p-n junctions have been fabricated by a standard 0.8 micron CMOS technology. The diode fabricated by the ion implantation process with two different condition. The reverse current and voltage (I-V)characteristics at varied temperature of p-n junctions have been measured. The power loss coefficient can be extracted from the leakage current versus temperature. Form the derivative of leakage current with temperature, the power loss with prediction trend curve can be obtained. © (2013) Trans Tech Publications, Switzerland.
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An improvement of forward current of P-N diode using soft X-ray method
(2013-02-01)
Rujanapich, Poopol
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Srithanachai, Itsara
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Ueamanapong, Surada
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Poya, Amporn
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Niemcharoen, Surasak
We present the experimental investigation of platinum doped P-N junction diodes that they were fabricated by using a CMOS technology. The effect of soft X-ray annealing technique on the device is investigated and the device performance improvement observed. The current-voltage (I-V) characteristics of the diodes were measured at room temperature. The forward current before and after irradiation can be explained relatively to the carrier recombination lifetime (τ<inf>r</inf>). After irradiation, at 55 and 70 keV for 55 and 205 seconds, the small change in leakage current is noted. However, the forward current is increased by several orders of magnitude. The carrier recombination lifetime was the main effects of the change in forward current. The recombination lifetimes after irradiation are decreased from 0.55μ??s to 0.45μs and 0.55μs to 0.48μs, which show that the device performances are sed after X-ray irradiation. Soft X-ray annealing is a new technique for improve the device performance. © 2013 American Scientific Publishers All rights reserved.
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Improved extraction of the local carrier generation lifetime from forward diode characteristics
(2012-01-01)
Pengchan, Weera
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Phetchakul, Toempong
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Poyai, Amporn
This paper is proposed to extract the local carrier generation lifetime from forward current-voltage (I-V) characteristics of p-n junctions in case of non-uniform defects. The different geometry p-n junctions have been fabricated by a standard CMOS technology. The forward I-V and high frequency capacitance-voltage (C-V) characteristics of p-n junctions have been measured. The recombination current density can be extracted from the area forward current density by subtracting with the area diffusion current density. Form the recombination current density, the local generation and recombination lifetime can be obtained.
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Effect of quenching medium on photocatalytic activity of nano-TiO2 prepared by solvothermal method
(2008-05-01)
Supphasrirongjaroen, Piyawat
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Praserthdam, Piyasan
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Panpranot, Joongjai
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Na-Ranong, Duangkamol
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Mekasuwandumrong, Okorn
Pure anatase nano-TiO<inf>2</inf> powders were synthesized by solvothermal method using titanium butoxide as the precursor and were subjected to a rapid quenching in various media such as H<inf>2</inf>O, H<inf>2</inf>O<inf>2</inf>, air, and liquid N<inf>2</inf> as a post-synthesis treatment. By creating a thermal shock effect, quenching process has shown to be an easy novel route for modifying surface defects of the nano-TiO<inf>2</inf> and its photocatalytic activity. In this study, the TiO<inf>2</inf> sample quenched in air at 77 K contained the highest amount of Ti<sup>3+</sup> surface defect with the highest Ti<sup>3+</sup>/OH and was found to exhibit the highest photocatalytic activity for ethylene decomposition. © 2007 Elsevier B.V. All rights reserved.

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