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Subject: search.filters.subject.Hole doping

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    Hole doping through indium intercalation into copper phthalocyanine
    (2013-10-29)
    Jaruvanawat, Anuchit
    ;
    Prajuabwan, Pakorn
    ;
    Rojanasuwan, Sunit
    ;
    Chanhom, Annop
    ;
    Rangkasikorn, Adirek
    A blend of molecular acceptor and molecular donor made of Copper Phthalocyanine (CuPc) and Indium in various ratios were evaporated in high vacuum on to intrinsic silicon substrates by using vacuum thermal co-evaporation technique. Electronic properties of In-doped CuPc thin films have been examined by X-ray photoelectron spectroscopy (XPS). The results obtained by XPS suggests that In-doped CuPc is a hole transport material. © (2013) Trans Tech Publications, Switzerland.
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    Hole doping through indium intercalation into nickel phthalocyanine
    (2013-04-29)
    Prajuabwan, Pakorn
    ;
    Rojanasuwan, Sunit
    ;
    Chanhom, Annop
    ;
    Jaruvanawat, Anuchit
    ;
    Rangkasikorn, Adirek
    A new intercalation of indium and nickel phthalocyanine(NiPc) thin films is developed by using thermal co-evaporation technique. X-ray diffractometer(XRD) and optical absorption spectroscopy of In-doped NiPc suggest the crystal structure of In-doped NiPc is α-phase as same as that of pristine NiPc. Current-voltage characteristic of Shottky diode fabricated with In-doped NiPc thin film shows the enhancement of charge carrier concentration due to indium doping. Further photoelectron spectroscopy experiments prove that In-doped NiPc is hole transport material. © (2013) Trans Tech Publications, Switzerland.