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Subject: search.filters.subject.Magnetodiode

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    A novel dual magnetodiode for wireless sensor networks
    (2020-08-14)
    Sutthinet, Chalin
    ;
    Poyai, Amporn
    ;
    Phetchakul, Toempong
    This paper presents a new magnetodiode, the so-called dual magnetodiode, for wireless sensor application. The device is a current mode which can be integrated with a chip compatible with modern low power, low voltage integrated circuit (IC). The structure and operation are completely different from a conventional magnetodiode. The structure is composed of two p–n junctions in that one region is common and the others are split terminals for output of differential current. The underlying mechanism is carrier deflection by induced force from a magnetic field. The carriers are injected from the common region by forward bias. The defection carriers diffuse, deflect, and recombine along substrate through split terminals according to direction and density of the magnetic field linearly and symmetrically. From the comparison of complementary structure of the split cathode and the split anode structure of L<inf>D</inf> = 50 µm, the bias current 1 mA and magnetic field 0.5 T, the relative sensitivities (S<inf>R</inf>) are 11.01 and 11.19 T<sup>−</sup><sup>1</sup>, respectively. This device is a simple p–n junction structure which is compatible with all micro/nanotechnology.
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    The mechanism of dual schottky magnetodiode
    (2012-10-02)
    Phetchakul, T.
    ;
    Luanatikomkul, W.
    ;
    Yamwong, W.
    ;
    Poyai, A.
    This paper presents the mechanism of dual schottky magnetodiode. The device can operate both in forward and reverse biasing for magnetic field sensor. Two modes of operation show linearity which electron is only type of carrier. In forward bias, the deflected electrons in n-type semiconductor cathode are injected to metal anode. In reverse bias, the electrons from metal anode are injected and continuously deflected in n-type semiconductor cathode. Comparison of two modes at the same current shows the same sensitivity. © 2012 IEEE.
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    The study of forward and reverse schottky junction for dual magnetodiode
    (2012-06-01)
    Phetchakul, T.
    ;
    Luanatikomkul, W.
    ;
    Yamwong, W.
    ;
    Poyai, A.
    This paper presents schottky diode for sensing magnetic field. The structure is the same as dual magnetodiode that had been reported by the same group. The device can operate both in forward and reverse biasing for magnetic field device. The sensitivity (ΔV <inf>o</inf>/ΔB) by simulation of forward bias is 0.8 mV/T at the current 1.93 μA and reverse bias is 6 nV/T at the current 13.49 pA. Two modes of operation show linearity which electron is the only type of carrier. The mechanism of forward and reverse modes of operation are described. © 2012 IEEE.
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    The study of p-n and schottky junction for magnetodiode
    (2012-01-01)
    Phetchakul, Toempong
    ;
    Luanatikomkul, Wittaya
    ;
    Leepattarapongpan, Chana
    ;
    Chaowicharat, Ekalak
    ;
    Pengpad, Putapon
    This paper presents the simulation model of Dual Magnetodiode and Dual Schottky Magnetodiode using Sentaurus TCAD to simulate the virtual structure of magneto device and apply Hall Effect to measure magnetic field response of the device. Firstly, we use the program to simulate the magnetodiode with p-type semiconductor and aluminum anode and measure electrical properties and magnetic field sensitivity. Simulation results show that sensitivity of Dual Schottky magnetodiode is higher than that of Dual magnetodiode.
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    Dual magnetodiode
    (2009-12-01)
    Phetchakul, Toempong
    ;
    Junkamkaw, Sumet
    This paper presents magnetodiode which the structure consists of two pn junction diodes. The anodes are common together and the cathodes are symmetrical separated. It is designed, fabricated and measured the magnetic responses. The mechanism is mainly carrier deflection of injected carrier from the common anode by forward biasing toward to the separated cathode. When magnetic field is applied perpendicular to the device surface, the current difference caused by Hall effect and Lorentz force is linearly changed with the magnetic field density at any applied current. It can detect both the direction and magnitude of magnetic field.