KMITL

Permanent URI for this communityhttps://dspace.kmitl.ac.th/handle/kmitl/1

Browse

Settings

Subject: search.filters.subject.Sentaurus TCAD

Search Results

Now showing 1 - 5 of 5
  • Loading...
    Thumbnail Image
    Some of the metrics are blocked by your 
    consent settings
    Item type:Publication,
    The effect of deviation current to 5-contacts vertical Hall device
    (2016-09-06)
    Phetchakul, Toempong
    ;
    Poonsawat, Sawatdipong
    ;
    Poyai, Amporn
    This paper presents the new model of 5-contacts vertical Hall device. Despite of the induced force from Hall electric field act upon the current along the contacts for induced Hall voltage, there are some deviation currents from the middle contact that contribute the Hall voltage. The deviation current pass through the bulk resistance causes the voltage drop between the voltage contacts. From this study for n-type substrate, the deviation current created voltage about 20-30 percent of the total Hall voltage that mean it is the importance mechanism for vertical Hall device. This study used 3-D simulation by Sentaurus TCAD.
  • Loading...
    Thumbnail Image
    Some of the metrics are blocked by your 
    consent settings
    Item type:Publication,
    The Design of Metal-Semiconductor-Metal Structure Magnetic Sensor
    (2016-01-01)
    Sutthinet, Chalin
    ;
    Phetchakul, Toempong
    ;
    Luanatikomkul, Wittaya
    ;
    Poyai, Amporn
    This paper presents the MSM structure magnetic detector device that normally detects the electromagnetic wave. The device is special design for magnetic field detector and still detects the electromagnetic wave as normal function. The schottky diode with the split contacts structure allows us to reach this target. The device operates with the saturation current and the magnetic response is the current difference between two contacts which is injected from one metal and deflected in semiconductor toward to another metal. From the simulation result by Sentaurus TCAD, the relative sensitivity is 14.19 mT<sup>-1</sup> at the current 0.3 μA. This device is the first MSM multi-sensor for magnetic and electromagnetic wave detector.
      1
  • Loading...
    Thumbnail Image
    Some of the metrics are blocked by your 
    consent settings
    Item type:Publication,
    The mechanism of dual schottky magnetodiode
    (2012-10-02)
    Phetchakul, T.
    ;
    Luanatikomkul, W.
    ;
    Yamwong, W.
    ;
    Poyai, A.
    This paper presents the mechanism of dual schottky magnetodiode. The device can operate both in forward and reverse biasing for magnetic field sensor. Two modes of operation show linearity which electron is only type of carrier. In forward bias, the deflected electrons in n-type semiconductor cathode are injected to metal anode. In reverse bias, the electrons from metal anode are injected and continuously deflected in n-type semiconductor cathode. Comparison of two modes at the same current shows the same sensitivity. © 2012 IEEE.
  • Loading...
    Thumbnail Image
    Some of the metrics are blocked by your 
    consent settings
    Item type:Publication,
    The study of forward and reverse schottky junction for dual magnetodiode
    (2012-06-01)
    Phetchakul, T.
    ;
    Luanatikomkul, W.
    ;
    Yamwong, W.
    ;
    Poyai, A.
    This paper presents schottky diode for sensing magnetic field. The structure is the same as dual magnetodiode that had been reported by the same group. The device can operate both in forward and reverse biasing for magnetic field device. The sensitivity (ΔV <inf>o</inf>/ΔB) by simulation of forward bias is 0.8 mV/T at the current 1.93 μA and reverse bias is 6 nV/T at the current 13.49 pA. Two modes of operation show linearity which electron is the only type of carrier. The mechanism of forward and reverse modes of operation are described. © 2012 IEEE.
      1
  • Loading...
    Thumbnail Image
    Some of the metrics are blocked by your 
    consent settings
    Item type:Publication,
    The study of p-n and schottky junction for magnetodiode
    (2012-01-01)
    Phetchakul, Toempong
    ;
    Luanatikomkul, Wittaya
    ;
    Leepattarapongpan, Chana
    ;
    Chaowicharat, Ekalak
    ;
    Pengpad, Putapon
    This paper presents the simulation model of Dual Magnetodiode and Dual Schottky Magnetodiode using Sentaurus TCAD to simulate the virtual structure of magneto device and apply Hall Effect to measure magnetic field response of the device. Firstly, we use the program to simulate the magnetodiode with p-type semiconductor and aluminum anode and measure electrical properties and magnetic field sensitivity. Simulation results show that sensitivity of Dual Schottky magnetodiode is higher than that of Dual magnetodiode.
      2