Kayunkid, Navaphun
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Kayunkid, Navaphun
Alternative Name
Kayunkid, N.
Kayunkid, Nawapun
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navaphun.ka@kmitl.ac.th
3 results
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Item type:Publication, Growth and characterization of novel optoelectronic materials. Based on II-VI inorganic/organic heterostructures(2006-01-01); ;Keawprajak, Anusit; ; Novel optoelectronic materials based on II-VI inorganic/organic low-dimensional heterostructure were successfully grown by electron beam evaporator. The structures were based on ZnSe, tris(8-hydroxyquinoline) aluminum (Alq<inf>3</inf>) and N,N'-bis(3-methylphenyl)-N,N'-diphenyl-benzidine (TPD). The surface morphology of the structures was investigated by atomic force microscopy and field emission scanning electron microscope. The optical and electronic properties were examined by photoluminescence, photocurrent and electroreflectance spectroscopy. Photoluminescence spectra of the ZnSe/Alq <inf>3</inf>/ZnSe structure attributed to the change of exciton energy as a result of quantum confinement showed the formation of single quantum well structure. The luminescence color can be varied by changing the thickness of the Alq<inf>3</inf> layer. The other heterostructure of ZnSe/Alq<inf>3</inf>/TPD was grown on silicon substrate. The wavelength response of this structure shown by photocurrent signal ranged from 450 nm to 1100 nm. Electroreflectance features due to optical transition energy of the single quantum well of this structure were also observed. Under applied voltage, electroreflectance signals showed significant shift due to the quantum confined Stark effect. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Electroreflectance and photocurrent measurement of ZnSe/Alq 3/TPD heterostructure on Si-substrate(2005-11-20); ;Keawprajak, A.; ; The optical transition energy in ZnSe/tris(8-hydroxyquinoline) aluminum (Alq<inf>3</inf>)/N,N′-bis(3-methylphenyl)-N,N′-diphenyl-benzidine (TPD) heterostructure were investigated by room-temperature electroreflectance (ER) and photocurrent (PC) measurements. PC signal showed wavelength response of the device in the range of 450-1100 nm. ER features due to optical transition energy of the single quantum well of this structure were observed. The transition energies were determined by fitting the ER spectra to the theoretical line-shape expression. The subband transition energy decreased with increasing well thickness. Under applied voltage, both ER signals show significant shift due to the quantum confined Stark effect. © 2005 Elsevier B.V. All rights reserved. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Blue emission mechanism of NPB/ZnSe hybrid structure(2007-08-28); ;Keawprajak, Anusit ;Jaruwanawat, AnuchitThe electrical and optical properties of organic-inorganic hybrid light emitting diodes (HLED) have been investigated. The HLED is consisted of organic material N,N'-di(naphthalene-1-yl)-N,N'- diphenyl-benzidine (NPB) as a hole transport layer and inorganic material zinc selenide (ZnSe) as an electron transport layer and emitting layer as well. The electrical and optical properties have been characterized by current-voltage measurement and electroluminescence (EL) spectroscopy, respectively. The current of HLED decreases with increasing ZnSc thickness, while the threshold voltage increases. The EL spectrum exhibits two peaks at 457 nm and 500 nm, due to electron-hole recombination from energy gap of ZnSe and recombination from defect states in ZnSe layer, respectively. The emission mechanism is described by electric field in organic and inorganic layers. © 2007 IEEE.
