Pengchan, Weera

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Pengchan, Weera
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Pengchan, W.
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weera.pe@kmitl.ac.th

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    Item type:Publication,
    Extraction of defect in doping silicon wafer by analyzing the lifetime profile method
    (2008-01-01)
    Pengchan, W.
    ;
    Phetchakul, T.
    ;
    Poyai, A.
    The total leakage current in silicon p-n junction diodes compatible with 0.8 μm CMOS technology is investigated. The generation lifetime is a key parameter for the leakage current, which can be obtained from the current-voltage (I-V) and the capacitance-voltage (C-V) characteristics. As will be shown, the electrically active defect from ion implantation process generated in p-n junction can be extracted from the generation current density. © 2008 Trans Tech Publications, Switzerland.