Now showing 1 - 1 of 1
  • Some of the metrics are blocked by your 
    Item type:Publication,
    The new design for magnetoresistance effect on hall plate structure
    (2012-10-02) ;
    Taisettavatkul, P.
    ;
    ;
    Yamwong, W.
    ;
    Poyai, A.
    This paper presents the new design which contributes to magnetoresistance effect on Hall plate by compared with series resistance structure by Sentaurus TCAD program. A new design creates zero Hall voltage area which the carriers move and deflect freely. The Hall plate structure is n-type silicon with 400 μm length, 100 μm width and 1 μm thickness. Both designs have percentage of magnetoresistance effect about 20% at doping concentration 2×10 <sup>15</sup>cm <sup>-3</sup>, temperature 300K at magnetic field 3 Tesla. A new design on Hall plate structure is easier than the classical series resistance and has no effect of metal space which is in series resistance structure. © 2012 IEEE.