Thiwawong, Thutiyaporn
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Preferred name
Thiwawong, Thutiyaporn
Alternative Name
Thiwawong, T.
Main Affiliation
Email
thutiyaporn.th@kmitl.ac.th
5 results
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Item type:Publication, Study of PDMS compounds using the adhesion force determined by AFM force distance curve measurements(2010-02-05); The atomic force microscope(AFM) was used to perform surface force measurements in contact mode to investigate surface properties of model systems at the nanoscale. Three different Polydimethylsiloxane (PDMS) compounds were observed. The first consisted of pure PDMS, the second of PDMS blend with the nanoparticles Zinc Oxide(PDMS/ZnO) and the third of PDMS blend with the nanoparticles Zinc Oxide and toluene solvent(PDMS/ZnO/toluene), respectively. Surface morphology and the adhesion force were investigated by using atomic force microscopy. Force - distance curve measurement was performed in a contact mode, which used tip as silicon nitride. Moreover, we found a significantly different of the adhesion force when modified by nanoparticles ZnO and toluene solvent. © (2010) Trans Tech Publications. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Electrical switching and conduction mechanisms of nonvolatile write-once-read-many-times memory devices with ZnO nanoparticles embedded in polyvinylpyrrolidone(2014-01-01); ; We reported on the influence of zinc oxide nanoparticles (ZnO NPs) on the electrical bistable behavior of nonvolatile write-once-read-many-times (WORM) memory devices based on an indium-tin oxide/polyvinylpyrrolidone (PVP):ZnO NPs/aluminum (ITO/PVP:ZnO/Al) structure. The maximum ON/OFF current ratio of the nonvolatile WORM memory devices was approximately 3 × 10<sup>3</sup> and the devices remained in the ON state even after the applied voltage was turned off. In addition, reliability studies for response time and once write/continuous read operations of the optimal ZnO NPs concentration are presented. The response times of both rise-time and fall-time were about 3 and 6 μs respectively. The conduction mechanisms of all voltage regions of the device were analyzed by theoretical models and electron trapping in the ZnO NPs of the electron tunneling among a PVP matrix was discussed. © 2014 Elsevier B.V. All rights reserved. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Bi-stable switching behaviors of ITO/EVA:ZnO NPs/ITO transparent memory devices fabricated using a thermal roll lamination technique(2016-04-01); ; This research reported the transparent non-volatile write-once-read-many-times (WORM) memory behaviors of memory devices based on zinc oxide nanoparticles (ZnO NPs) embedded in an insulating poly(ethylene-co-vinyl acetate) (EVA), sandwiched between two ITO-coated flexible polyethylene naphthalate (PEN) substrates. The memory devices were fabricated employing a thermal roll lamination technique with the laminated-structure of PEN/ITO/EVA:ZnO NPs/ITO/PEN. The average transmittance of the laminated memory device was over 70% for an optical visible range of 400-800 nm. The maximum ON/OFF current ratio for the memory device was about 10<sup>3</sup>. In addition, a reliability study for continuous read operations in a long time memory device is presented. The conductance switching mechanisms of the laminated memory device were analyzed using theoretical models on the basis of the experimental data. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Structural, Optical, and Electrical Properties of Sputtered ZnO Thin Films and Their Application in Transparent Memory Devices(2022-12-01); ; We report on the fabrication of ZnO thin films using a lab-made DC sputtering process. The ZnO films were prepared at several applied sputter voltages at fixed deposition times. The properties of the deposited films were characterized by x-ray diffraction, x-ray photoelectron spectroscopy, field-emission scanning electron microscopy, and UV–visible spectroscopy. The ZnO thin films exhibited a polycrystalline phase in the dominant (100) plane, with film thicknesses in the order of approximately 50–80 nm. In addition, a transparent memory device based on the ZnO film was successfully fabricated with a device structure of ITO/ZnO/EVA/ITO. The fabricated device exhibited high optical transparency of approximately 70% in the visible light region. The fabricated memory device demonstrated memory properties with a maximum ON/OFF current ratio of 4.66 × 10<sup>3</sup> and showed good retention properties. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Preparation of Composite Films of Rod-like Structure of ZnO and Corn Starch for Bending Sensor(2026-01-01); ; In this work, rod-like structure zinc oxide (R-ZnO) was synthesized by a hydrothermal process with the hydrothermal times of 3, 5, and 10 h. The effect of reaction time was reflected in the physical properties of the prepared R-ZnO, such as crystalline structure, shape geometries, and optical properties. Then, a bending device was fabricated with starch composite films and the rod-like structure of zinc oxide with different R-ZnO concentrations. The fabricated device exhibited flexibility characteristics at various bending angles. The composite film of corn starch and 1%wt. R-ZnO at a hydrothermal reaction time of 10 h demonstrated a high sensitivity at 89.5% with a gauge factor of 1.58. Moreover, the device of corn starch composited with R-ZnO exhibited fast response/recovery time of 0.23/0.15 s with high stability of bending cycle of more than 1,600 cycles. Therefore, the composite films of R-ZnO and natural starch are strong potential candidates for bending devices.