Onlaor, Korakot
Loading...
Preferred name
Onlaor, Korakot
Alternative Name
Onlaor, K.
Main Affiliation
Email
korakot.on@kmitl.ac.th
5 results
Now showing 1 - 5 of 5
- Some of the metrics are blocked by yourconsent settings
Item type:Publication, Electrical mechanisms of bi-stable memory devices based on an Al/PVK:ZnO NPs/ITO structure with different ZnO NPs annealing temperatures(2016-10-01); - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Electrical switching and conduction mechanisms of nonvolatile write-once-read-many-times memory devices with ZnO nanoparticles embedded in polyvinylpyrrolidone(2014-01-01); ; We reported on the influence of zinc oxide nanoparticles (ZnO NPs) on the electrical bistable behavior of nonvolatile write-once-read-many-times (WORM) memory devices based on an indium-tin oxide/polyvinylpyrrolidone (PVP):ZnO NPs/aluminum (ITO/PVP:ZnO/Al) structure. The maximum ON/OFF current ratio of the nonvolatile WORM memory devices was approximately 3 × 10<sup>3</sup> and the devices remained in the ON state even after the applied voltage was turned off. In addition, reliability studies for response time and once write/continuous read operations of the optimal ZnO NPs concentration are presented. The response times of both rise-time and fall-time were about 3 and 6 μs respectively. The conduction mechanisms of all voltage regions of the device were analyzed by theoretical models and electron trapping in the ZnO NPs of the electron tunneling among a PVP matrix was discussed. © 2014 Elsevier B.V. All rights reserved. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Bi-stable switching behaviors of ITO/EVA:ZnO NPs/ITO transparent memory devices fabricated using a thermal roll lamination technique(2016-04-01); ; This research reported the transparent non-volatile write-once-read-many-times (WORM) memory behaviors of memory devices based on zinc oxide nanoparticles (ZnO NPs) embedded in an insulating poly(ethylene-co-vinyl acetate) (EVA), sandwiched between two ITO-coated flexible polyethylene naphthalate (PEN) substrates. The memory devices were fabricated employing a thermal roll lamination technique with the laminated-structure of PEN/ITO/EVA:ZnO NPs/ITO/PEN. The average transmittance of the laminated memory device was over 70% for an optical visible range of 400-800 nm. The maximum ON/OFF current ratio for the memory device was about 10<sup>3</sup>. In addition, a reliability study for continuous read operations in a long time memory device is presented. The conductance switching mechanisms of the laminated memory device were analyzed using theoretical models on the basis of the experimental data. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Structural, Optical, and Electrical Properties of Sputtered ZnO Thin Films and Their Application in Transparent Memory Devices(2022-12-01); ; We report on the fabrication of ZnO thin films using a lab-made DC sputtering process. The ZnO films were prepared at several applied sputter voltages at fixed deposition times. The properties of the deposited films were characterized by x-ray diffraction, x-ray photoelectron spectroscopy, field-emission scanning electron microscopy, and UV–visible spectroscopy. The ZnO thin films exhibited a polycrystalline phase in the dominant (100) plane, with film thicknesses in the order of approximately 50–80 nm. In addition, a transparent memory device based on the ZnO film was successfully fabricated with a device structure of ITO/ZnO/EVA/ITO. The fabricated device exhibited high optical transparency of approximately 70% in the visible light region. The fabricated memory device demonstrated memory properties with a maximum ON/OFF current ratio of 4.66 × 10<sup>3</sup> and showed good retention properties. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Preparation of Composite Films of Rod-like Structure of ZnO and Corn Starch for Bending Sensor(2026-01-01); ; In this work, rod-like structure zinc oxide (R-ZnO) was synthesized by a hydrothermal process with the hydrothermal times of 3, 5, and 10 h. The effect of reaction time was reflected in the physical properties of the prepared R-ZnO, such as crystalline structure, shape geometries, and optical properties. Then, a bending device was fabricated with starch composite films and the rod-like structure of zinc oxide with different R-ZnO concentrations. The fabricated device exhibited flexibility characteristics at various bending angles. The composite film of corn starch and 1%wt. R-ZnO at a hydrothermal reaction time of 10 h demonstrated a high sensitivity at 89.5% with a gauge factor of 1.58. Moreover, the device of corn starch composited with R-ZnO exhibited fast response/recovery time of 0.23/0.15 s with high stability of bending cycle of more than 1,600 cycles. Therefore, the composite films of R-ZnO and natural starch are strong potential candidates for bending devices.