Khemasiri, Narathon

Preferred name

Khemasiri, Narathon

Alternative Name

Khemasiri, N.

narathon.kh@kmitl.ac.th

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Vertical alignment TiO2 nanotube based on Ti film prepared via anodization technique
(2016-01-01)
Aimpanakit, Kamon
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Jessadaluk, Sukittaya
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Tongmaha, Sunisa
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Supati, Attawit
;
Khemasiri, Narathon
A highly ordered nanotube TiO<inf>2</inf> was successfully prepared from sputtered Ti metal film using anodization process. Ethylene glycol and ammonium fluoride was introduced as the electrolyte solution. The applied of anodizing voltage was systematically controlled between 20-60 volts along fabrication process, respectively. The physical characteristic of the fabricated TiO<inf>2</inf> nanotube including anodizing rate, tube diameter and tube width was investigated through the characterization system as field emission scanning electron microscope (FE-SEM). According to cross-section FE-SEM photograph, the anodizing rate and tube width significantly increases when the anodizing voltage was future increased due to higher the electric field. Moreover, the tube diameter directly depends with the anodizing voltage also. The anodizing voltage provides a significant role on the feature of TiO<inf>2</inf> nanotube. Finally, the fabricated nanotube TiO<inf>2</inf> is potentially promising for Photo-activated application and Nanostructure template.
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Optical band engineering of metal-oxynitride based on tantalum oxide thin film fabricated via reactive gas-timing RF magnetron sputtering
(2016-11-25)
Khemasiri, N.
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Jessadaluk, S.
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Chananonnawathorn, C.
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Vuttivong, S.
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Lertvanithphol, T.
In this paper, we demonstrate a novel technique, as called reactive gas-timing (RGT) RF magnetron sputtering, to control and design an optical band engineering of TaON thin films without an external heating substrate temperature and post annealing treatment process. The influence of the oxygen intervals ranged from 5 to 60 s on deposition rate, chemical composition and optical properties of TaON thin films were investigated. The chemical composition was characterized by auger electron spectroscopy (AES). The optical properties were determined by UV–Vis spectrophotometer and spectroscopic ellipsometry. The nitrogen atomic concentration of the TaON thin films deposited by RGT decreased when the oxygen gas-timing intervals increased. In addition, the RGT sputtered TaON films could be demonstrated band gaps engineering from 1.90 to 2.15 eV.
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High sensitive nanocrystal titanium nitride EG-FET pH sensor
(2013-10-29)
Rayanasukha, Yossawat
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Porntheeraphat, Supanit
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Bunjongpru, Win
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Khemasiri, Narathon
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Pankiew, Apirak
Solid state pH-sensor device with high efficiency has successfully prepared by using TiN thin film as sensing membrane of extended gate field effect transistor (EG-FET) device. This research has described the physical properties and sensing characteristics of TiN membrane thin film which deposited on SiO<inf>2</inf>/Si substrate through reactive D.C. magnetron sputtering system. Thenanocrytal-TiNwith anatasestructure depended on substrate heating conditions was revealed from glancing angle x-ray diffraction. The I<inf>DS</inf>-V<inf>GS</inf> measurement in the standard buffer solutions showed that the sensitivity of fabricated TiN-EGFET pH deviceis 59.82mV/pH. © (2013) Trans Tech Publications, Switzerland.
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Determination of thickness and optical properties of tantalum oxide thin films by spectroscopic ellipsometry
(2014-01-01)
Chananonnawathorn, Chanunthorn
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Khemasiri, Narathon
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Srichaiyaperk, Thanat
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Samransuksamer, Benjarong
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Horprathum, Mati
Tantalum oxide (Ta<inf>2</inf>O<inf>5</inf>) thin films were prepared, at different deposition time, by a DC reactive magnetron sputtering. During the deposition, a high-quality tantalum target was sputtered under argon and oxygen ambience on to silicon (100) and glass substrates. The prepared thin films were systematically characterized for both physical and optical properties based on spectroscopic ellipsometry (SE), and consequently confirmed by several methods. With the SE physical models, we could determine the thin film thickness as well as their inhomogeneity. The films thickness results were directly confirmed by field-emission scanning electron microscopy (FE-SEM) used to observe cross-sections, and surface profiler used to measure the physical thickness of the films. With the SE optical models, we applied both the Cauchy and Tauc-Lorentz dispersions in order to obtain the optical constants, to be directly compared with those from the Swanepoel method (SM). Our result showed that from the SE analyses, the SE physical model was obtained as the multi-layer configurations. The obtained Ta<inf>2</inf>O<inf>5</inf> thin film thickness was closely related with the measured result from the FE-SEM cross-sectional micrographs and the surface profiler. For the optical characteristic, the double layer physical model was best optimized with the Tauc Lorentz dispersion model for the most accurate results. In comparison, the SM technique also demonstrated a capability to determine both the film thickness and its refractive index only from some samples. Therefore, this study proved that the SE technique successfully and accurately determine both the physical and optical properties of the Ta<inf>2</inf>O<inf>5</inf> thin films. © (2014) Trans Tech Publications, Switzerland.
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Fabrication of zinc oxide nanorods for photoelectrochemical water splitting application
(2016-01-01)
Phetban, Poosuda
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Khemasiri, Narathon
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Kalasung, Sukol
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Jessadaluk, Sukukittaya
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Horprathum, Mati
Zinc oxide nanorods (ZnO-NRs) as a photoelectrochemical water splitting electrode have been fabricated by the seed-assisted hydrothermal process. Initially, ZnO-seed thin film was deposited on indium doped tin oxide (ITO) via DC magnetron sputtering system. Period to fabricate ZnO-NRs, the precursor concentration of zinc nitrate (Zn(NO<inf>3</inf>)<inf>2</inf>) and hexamethylenetetramine (HMTA) were precisely controlled during 10-50 mM, meanwhile the ratio was constantly kept at 1:1. The crystallography and surface morphology of the fabricated ZnO-NRs were investigated by X-ray diffraction (XRD) and field emission scanning electron microscope (FE-SEM). The XRD patterns perform wurtzite ZnO crystal structure of with the prefered orientation in (002) and (101) plane. According to FE-SEM photograph, growth rate, density and diameter of the fabricated ZnO-NRs electrode significantly increase, with the increasing of the precursor concentration. This precursor concentration provides a crucial role on the feature of ZnO-NRs for photoelectrochemical water splitting electrode. Finally, the photoelectrochemical water splitting performance was examined and provided that the precursor concentration became close to 30 mM in 1 M Na<inf>2</inf>SO<inf>4</inf> exhibited the highest photocurrent.
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Effects of thermal treatment on hydrophilicity and corrosion resistance of Ti surface
(2019-03-01)
Boonrungsiman, Suwimon
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Prompinit, Panida
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Khemthong, Pongtanawat
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Wutikhun, Tuksadon
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Treethong, Alongkot
Surface treatment of titanium (Ti) surface has been extensively studied to improve its properties for biomedical applications, including hydrophilicity, corrosion resistance, and tissue integration. In this present work, we present the effects of thermal oxidation as surface modification method on metallic titanium (Ti). The Ti foils were oxidized at 300°C, 400°C, 500°C, and 600°C under air atmosphere for 3 hours, which formed oxide layer on Ti surface. The physicochemical properties including surface chemistry, roughness, and thickness of the oxide layer were evaluated in order to investigate how these factors affected surface hydrophilicity, microhardness, and corrosion resistance properties of the Ti surface. The results revealed that surfaces of all oxidized samples were modified by formation of titanium dioxide layer, of which morphology, phase, and thickness were changed according to the oxidized temperatures. Increasing oxidation temperature led to the formation of thicker oxide layer and phase transformation of anatase to rutile. The presence of the oxide layer helped the improvement of corrosion resistance and microhardness. The most improvement in surface roughness was found in the specimens treated at 400°C, which significantly improved surface hydrophilicity. But both surface roughness and hydrophilicity reduced when oxidized at 500°C and 600°C, suggesting that hydrophilicity was dominated by the surface roughness. In addition, this surface treatment did not reduce the biocompatibility of the metallic Ti substrates against murine osteoblasts (MC3T3).
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Modification of a photoanode by means of localized surface plasmon resonance from Au nanoparticles decorated on ZnO nanorods for photoelectrochemical applications
(2019-01-01)
Khemasiri, Narathon
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Soyeux, Nathan
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Rattanawarinchai, Prapakorn
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Jessadaluk, Sukittiya
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Klamchuen, Annop
Photoelectrochemical (PEC) activity is possibly enhanced by an increase in photocurrent generated from the photoanode. In this work, a modified photoanode that consists of zinc oxide nanorods (ZnO-NRs) decorated with gold nanoparticles (Au-NPs) is proposed to improve the generation of photocurrent. X-ray diffraction and scanning electron microscopy are employed to confirm the decoration of Au-NPs on well-aligned ZnO-NRs. A significant enhancement (∼4 times) in photocurrent density is obtained from the ZnO-NR photoanode decorated with Au-NPs compared to the bare ZnO-NR photoanode. Photoluminescence and UV-visible spectroscopy reveal that the improvement in photocurrent density results from (i) the decrease in charge recombination in the ZnO-NRs due to charge dissociation and (ii) the additional injection of charge from Au-NPs owing to localized surface plasmon resonance. This research presents the idea of taking the benefit from Au-NPs to enhance the photocurrent density in PEC applications through the decrease in charge recombination and the increase in charge injection.
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High performance metal surface coating using Ta2O5 thin film prepared by D. C. magnetron sputtering
(2014-01-01)
Khemasiri, Narathon
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Chananonnawathorn, Chanunthorn
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Horprathum, Mati
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Eiamchai, Pitak
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Chindaudom, Pongpan
Tantalum oxide (Ta<inf>2</inf>O<inf>5</inf>) thin films were deposited as the protective layers for the metal surface finishing by the DC reactive magnetron sputtering system. The effect of the Ta<inf>2</inf>O<inf>5</inf> film thickness, ranging from 25 nm to 200 nm, on the physical properties and the anti-corrosive performance were investigated. The grazing-incidence X-ray diffraction (GIXRD) and the atomic force microscopy (AFM) were used to examine the crystal structures and the surface topologies of the prepared films, respectively. The XRD results showed that the Ta<inf>2</inf>O<inf>5</inf> thin films were all amorphous. The AFM micrographs demonstrated the film morphology with quite smooth surface features. The surface roughness tended to be rough when the film thickness was increased. To examine the protective performance of the films, the poteniostat and galvanometer was utilized to examine the electrochemical activities with the 1M NaCl as the corrosive electrolyte. The results from the I-V polarization curves (Tafel slope) indicated that, with the Ta<inf>2</inf>O<inf>5</inf> thin film, the current density was significantly reduced by 3 orders of magnitude when compared with the blank sample. Such results were observed because of fully encapsulated surface of the samples were covered with the sputtered Ta<inf>2</inf>O<inf>5</inf> thin films. The study also showed that the Ta<inf>2</inf>O<inf>5</inf> thin film deposited at 50 nm yielded the most extreme protective performance. The Ta<inf>2</inf>O<inf>5</inf> thin films therefore could be optimized for the smallest film thickness for highly potential role in the protective performance of the metal surface finishing products. © (2014) Trans Tech Publications, Switzerland.
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Silicon nitride thin films deposited by reactive gas-timing magnetron sputtering for protective coating applications
(2015-01-01)
Khemasiri, N.
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Paleeya, N.
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Sae-tang Phromyothin, D.
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Horprathum, M.
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Porntheeraphat, S.
Silicon nitride is a promising alternative to carbon based materials for protective coatings, owing to its compatibility with existing silicon-based microfabrication. The complexity of the fabrication processes and contaminations hamper fine-tuning to obtain desirable coating properties. We have explored the reactive gas-timing rf plasma sputtering technique for silicon nitride thin film deposition as an alternative method to fine-tune the film properties. The gas-timing technique controls the on-off sequence of the sputtering gas (Ar) and the reactive gas (N<inf>2</inf>) during deposition. We focus this investigation to the effect of the Ar:N<inf>2</inf> gas timing ratio (10:0, 10:1, 10:3, 10:5, 10:7 and 10:10) on the composition, the morphology, the corrosion resistance, and the hardness properties of the films, in comparison to the films deposited by conventional reactive sputtering with Ar-N<inf>2</inf> gas mixture. These deposited silicon nitride films were characterized by Auger electron spectroscopy, Raman spectroscopy, and atomic force microscopy. The chemical resistance was measured by the electrochemical corrosion test in sulfuric acid, while the hardness properties were obtained by nanoindentation. The results reveal that although the nitrogen content in the films increases only slightly when the N<inf>2</inf> timing is prolonged, the corrosive current of the films decreases abruptly. A thin passivating oxidized layer is found to play a major role in the corrosion resistance. In contrast, the hardness properties exhibit a uniform variation with the N<inf>2</inf> timing. The gas-timing sequence may induce morphological changes the underlying silicon nitride films. The highest hardness obtained by the gas-timing technique almost doubles that produced by the conventional mixed gas sputtering. Thus the reactive gas-timing technique suggests a new route to selectively control the properties of silicon nitride films with minor modification to existing microfabrication processes.
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Study of optical and electrical properties of tin doped cobalt-phthalocyanine thin films prepared by thermal co-evaporation
(2018-09-05)
Tammarugwattana, Narin
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Jessadaluk, Sukittaya
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Khemasiri, Narathon
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Rahong, Sakon
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Rangkasikorn, Adirek
The aim of this research is to study the specific properties e.g. surface morphology, optical absorption as well as electrical conductivity of tin-doped cobalt-phthalocyanine (CoPc) thin film prepared by thermal co-evaporation. The concentration of tin metal dopant is controlled via evaporation rate during film's preparation. The change of tin quantity leads to the significant changes not only in morphology but also in molecular packing of the doped films. Moreover, the dramatic increase in both carrier mobility and carrier concentration should provide the enhancement in electrical conductivity of the doped films. By controlling the specific properties of the tin-doped CoPc thin film, the increasing efficiency of optoelectronic applications based on metal-phthalocyanine could be achieved.

Khemasiri, Narathon

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