Parnklang, Jirawath

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Parnklang, Jirawath
Alternative Name
Parnklang, J.
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Email
jirawath.par@kmitl.ac.th

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    The MIIS structure capacitor fabricated with high permittivity material
    (1999-01-01)
    Parnklang, J.
    ;
    Surathammanun, J.
    ;
    Julprapa, A.
    ;
    Riewruja, V.
    ;
    Titiroongruang, W.
    The MIIS (Metal Insulator Intrinsic Semiconductor) structure capacitor consists of the aluminum, ZnO insulator and n-Type silicon doped with gold atoms. The different electrical characteristics of the devices from the standard MOIS (Metal Oxide Intrinsic Semiconductor) structure capacitor which is fabricated from SiO<inf>2</inf> are presented in this paper. The experimental results show that the threshold voltage of the devices (V<inf>TO</inf>) is smaller than the MOIS devices, the zinc oxide capacitor values (C<inf>OX</inf>) are higher but the total capacitor value (C<inf>T</inf>) of the device does not change.
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    Four-quadrant CMOS analog divider
    (1998-12-01)
    Parnklang, J.
    ;
    Arammongkonwichai, C.
    ;
    Kongtanasunthorn, P.
    The novel four-quadrant analog divider circuit is presented. Essentially, it consists of two building blocks of circuits, a basic analog divider circuit, and a switching part. Analog divider circuit can be implemented by a second-generation current conveyor (CCII), which compose with two MOS transistors biased in non-saturation region, a voltage buffer and a resistor. The SPICE simulation results are given to verify the theoretical analysis.
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    CMOS current follower circuits
    (1999-01-01)
    Parnklang, J.
    ;
    Nanthanawanitch, W.
    ;
    Titiroongruang, W.
    We design current follower circuits (CF) using the CMOS transistor to substitute for the bipolar transistor circuit. The experimental result which uses Spice program found that the input and output impedance of the circuit are 5 kω and 76 Mω respectively. Moreover, the bandwidth of the circuit can be used in a wide range from 0 Hz to 4.1 MHz for CF<sup>+</sup> and 0 Hz to 3.4 MHz and the harmonic distortion is less than 4.06% for CF<sup>+</sup> and 4.27% for CF/sup-/. We also implement the circuit by using a commercial MOS transistor 4007, which consists of a dual complement of the CMOS transistor. The implemented circuits show that the electrical characteristics are the same as the analysis results from the Spice program.