Sakdanuphab, Rachsak
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Sakdanuphab, Rachsak
Alternative Name
Sakdanuphab, R.
Sakdanuphab, Rachasak
Main Affiliation
Email
rachsak.sa@kmitl.ac.th
14 results
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Item type:Publication, Enhanced hydrophilicity for TiO2 nanotube array by simultaneous nitrogen plasma and thermal annealing treatments(2018-09-05); In this work, highly ordered TiO<inf>2</inf> nanotube (TNTs) array was fabricated by electrochemical anodization technique on titanium sheet. Simultaneous N<inf>2</inf> plasma and thermal annealing process were employed on TNTs using different N<inf>2</inf> gas flow rates at 500°C. As-anodized and N<inf>2</inf> plasma TNTs were characterized for their microstructure, surface elemental composition, and wettability by scanning electron microscope, X-ray diffraction, X-ray photoelectron spectroscopy (XPS), and contact angle measurement, respectively. It was found that N<inf>2</inf> plasma and thermal annealing treatments affect to the change of crystal structure, surface chemistry and wettability of TNTs. The N<inf>2</inf> plasma TNTs exhibits anatase phase with the orientations of (101) and (200). XPS spectra show that the nitrogen atom from plasma was introduced into the surface of TNTs and depends on the N<inf>2</inf> gas flow rates. From contact angle measurement, it can be observed the improvement of wettability (hydrophilicity) of the TNTs due to the N-doped TiO<inf>2</inf> nanotube after N<inf>2</inf> plasma and thermal annealing treatments. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, The advantages of ga-graded obtained by growth profile modification and Na incorporation on Cu(In,Ga)Se2 solar cells(2014-01-01); - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Figures of merit of low-cost CuAl0.9Fe0.1O2 thermoelectric material prepared at different solid state reaction sintering temperatures(2015-01-01); - Some of the metrics are blocked by yourconsent settings
Item type:Publication, The effects of O2:N2 gas ratios on structural, optical, electrical properties of TiOxNy thin film deposited by reactive DC magnetron sputtering(2015-01-01) - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Structural, morphological and adhesion properties of coFeB thin films deposited by DC magnetron sputtering(2013-10-29) - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Changes in structural, morphological, and corrosion properties of CrN thin film effected by varying N2 pressure In the sputtering process(2015-01-01); - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Hardness and wear resistance improvement of ABS surface by CrN thin film(2017-01-01); ; This work aims to investigate the effect of sputtering power on the hardness and wear resistance of chromium nitride (CrN) thin films deposited on the acrylonitrile butadiene styrene (ABS) substrates. These coatings were performed by a reactive DC magnetron sputtering technique. The values of sputtering power were adjusted in the range of 125-200 W. The total pressure (P<inf>t</inf>), nitrogen partial pressure (P<inf>N2</inf>), and sputtering time were kept constant at 4×10<sup>-3</sup> mbar, 30%, and 120 min, respectively. The surface roughness of the thin films was characterized by atomic force microscopy (AFM). The crystalline structure of these CrN thin films was studied using X-ray diffraction (XRD). The hardness and Young's modulus of the CrN coated ABS samples were analyzed by a nanoindentation hardness test. Wear resistance tests under ambient air condition at room temperature were carried out by pin-on-disc method. The wear scars of the samples were determined by scanning electron microscope (SEM). The results showed that the hardness values were varied from 6.65 to 9.58 GPa. Young's modulus of the samples was changed from 30.87 to 44.25 GPa. The CrN coating deposited on the ABS substrate at 175 W exhibited the highest hardness of 9.58 GPa which value is as high as that of steel. This indicated its potential and promising applications as hard coating layers for ABS plastic parts. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, The analysis of a microwave sensor signal for detecting a kick gesture(2018-08-13); A hands-free operation is a solution for people who require a hand to do an action but both right and left hands are busy carrying something. There are many techniques, and most of them use sensors to check a command from humans such as voice and movement. A kick gesture is one technique that people can kick into the air to invoke an operation of a target device such as a kick-activation liftgate of a car. In this paper, we use a microwave sensor to detect the movement of a human's foot and employ machine learning techniques to analyses the sensor data. It has found that the Logistic Regression technique provides the best accuracy, and the model can be simply programmed in an embedded system. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, The influence of N2 partial pressure on color, mechanical, and corrosion properties of TiN thin films deposited by dc reactive magnetron sputtering(2015-01-01); Multi-functional thin films have gained increasing importance in a decorative application. Among the available material, titanium nitride (TiN) thin film is interesting due to its golden color and mechanical resistance. Beside their properties, the corrosion property of TiN films is mainly considered in order to extend the life time. In this work, the TiN thin films were deposited on 3×3 cm<sup>2</sup> Si(100) substrates by dc reactive magnetron sputtering technique. The effects of N<inf>2</inf> partial pressure (P<inf>N2</inf>) on deposited film properties such as microstructure, surface morphology, color, mechanical and corrosion properties were investigated. We found that the crystal structure of the TiN films exhibit the (200) preferred orientation. The color of TiN films change from gold-yellow to gold-red colors by increasing of N<inf>2</inf> partial pressure that could be explained by Drude model. The TiN films have smoother surface when the N<inf>2</inf> partial pressure increases. Standard corrosion tests in artificial sweat solution show the corrosion current density (i<inf>corr</inf>) in the range between 0.25 to 4.25 μA/cm<sup>2</sup> and the polarization resistance increases with increasing of N<inf>2</inf> partial pressure. The highest hardness of the film is approximately 40 GPa with elastic modulus of 340 GPa. We conclude that N<inf>2</inf> partial pressure corelates with color, mechanical property and corrosion resistance of TiN films, which were optimized to use in decorative application. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Resistive switching behavior of Ti/ZnO/Mo thin film structure for nonvolatile memory applications(2015-01-01); In this work, we study the resistive switching behavior of a new model metal/insulator/metal (MIM) junction. The MIM junction consists of titanium front electrode, zinc oxide insulation layer and molybdenum back electrode. The Ti/ZnO/Mo structure was prepared on 3×3 cm<sup>2</sup> soda lime glass substrates using dc magnetron sputtering for metal electrodes and rf magnetron sputtering for ZnO layer. The thicknesses of Ti, ZnO and Mo films were controlled at 200nm, 50nm and 500nm, respectively. The crystalline structure and microstructure of the films were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). The current-voltage (I-V) characteristics of the device cells were obtained by using dc voltage sweep mode. The XRD spectra of the devices show Mo(100) and ZnO(002) preferred orientations. The Mo and ZnO film surfaces exhibit dense crystallized grains with the root mean square roughness (RMS) of 1.0 and 1.4 nm, respectively. The device cells behave unipolar resistive switching characteristics with reversible, controllable and reliability within 150 cycles. The difference between high resistive state (HRS) and low resistive state (LRS) is about 10<sup>3</sup> times. A low operating voltage range of 0.50-0.60V is obtained for switching from HRS to LRS at a current compliance of 10mA. The new MIM structure was demonstrated and suggested a potential to use as nonvolatile memory application.