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    Influence of Antimony Species on Electrical Properties of Sb-Doped Zinc Oxide Thin Films Prepared by Pulsed Laser Deposition
    (2023-06-01)
    Jessadaluk, Sukittaya
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    This study systematically investigates the influence of antimony (Sb) species on the electrical properties of Sb-doped zinc oxide (SZO) thin films prepared by pulsed laser deposition in an oxygen-rich environment. The Sb species-related defects were controlled through a qualitative change in energy per atom by increasing the Sb content in the Sb<inf>2</inf>O<inf>3</inf>:ZnO-ablating target. By increasing the content of Sb<inf>2</inf>O<inf>3</inf> (wt.%) in the target, Sb<sup>3+</sup> became the dominant Sb ablation species in the plasma plume. Consequently, n-type conductivity was converted to p-type conductivity in the SZO thin films prepared using the ablating target containing 2 wt.% Sb<inf>2</inf>O<inf>3</inf>. The substituted Sb species in the Zn site (Sb<inf>Zn</inf><sup>3+</sup> and Sb<inf>Zn</inf><sup>+</sup>) were responsible for forming n-type conductivity at low-level Sb doping. On the other hand, the Sb–Zn complex defects (Sb<inf>Zn</inf>–2V<inf>Zn</inf>) contributed to the formation of p-type conductivity at high-level doping. The increase in Sb<inf>2</inf>O<inf>3</inf> content in the ablating target, leading to a qualitative change in energy per Sb ion, offers a new pathway to achieve high-performing optoelectronics using ZnO-based p–n junctions.
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    Growth and characterizations of tin-doped nickel-phthalocyanine thin film prepared by thermal co-evaporation as a novel nanomaterial
    The aim of this research is to control specific properties of nickel-phthalocyanine (NiPc) thin film by doping with tin (Sn). The hybrid thin films, Sn-doped NiPc, were fabricated by thermal co-evaporation as a function of Sn concentration. The quantity of Sn in NiPc matrix was controlled via the different deposition rate between Sn and NiPc. The specific properties of the hybrid films, e.g. morphology, optical absorption, chemical bonding as well as electrical characteristics of the devices used such hybrid material as an active layer were characterized by combinations of microscopic and spectroscopic techniques. The experimental results evidently present the modification of thin film properties by adding Sn into NiPc matrix, i.e. the change of morphology from granules to fibers, the increase of beta-phase formation in the films as well as the enhancement of electrical properties resulting from the increase of both charge carrier mobility and carrier concentration in the hybrid material. Moreover, the internal formation of the Sn-doped NiPc reveals that Sn dopants are embedded in the NiPc matrix as Sn metal clusters coated with derivative metal oxide of Sn (SnO<inf>x</inf>). This research demonstrates that the doping metal-phthalocyanine with metal is an alternative approach to control the specific properties that possibly suit for organic electronic applications.