Rahong, Sakon
Loading...
Preferred name
Rahong, Sakon
Alternative Name
Rahong, S.
Main Affiliation
Email
sakon.ra@kmitl.ac.th
17 results
Now showing 1 - 10 of 17
- Some of the metrics are blocked by yourconsent settings
Item type:Publication, ZnO Nanorods Grown on Heterogenous Ag Seed Layers for Single-Cell Fluorescence Bioassays(2021-07-23) - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Superparamagnetic nanoparticles encapsulation via droplet-based microfluidics for targeted drug delivery system(2019-01-01); ; - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Metal Oxide Nanostructures Enhanced Microfluidic Platform for Efficient and Sensitive Immunofluorescence Detection of Dengue Virus(2023-11-01) - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Annealed zno/al2o3 core-shell nanowire as a platform to capture rna in blood plasma(2021-07-01); Wuthikhun, TuksadonRNA analytical platforms gained extensive attention recently for RNA-based molecular analysis. However, the major challenge for analyzing RNAs is their low concentration in blood plasma samples, hindering the use of RNAs for diagnostics. Platforms that can enrich RNAs are essential to enhance molecular detection. Here, we developed the annealed ZnO/Al<inf>2</inf>O<inf>3</inf> core-shell nanowire device as a platform to capture RNAs. We showed that the annealed ZnO/Al<inf>2</inf>O<inf>3</inf> core-shell nanowire could capture RNAs with high efficiency compared to that of other circulating nucleic acids, including genomic DNA (gDNA) and cell-free DNA (cfDNA). Moreover, the nanowire was considered to be biocompatible with blood plasma samples due to the crystalline structure of the Al<inf>2</inf>O<inf>3</inf> shell which serves as a protective layer to prevent nanowire degradation. Our developed device has the potential to be a platform for RNA-based extraction and detection. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Modification of a photoanode by means of localized surface plasmon resonance from Au nanoparticles decorated on ZnO nanorods for photoelectrochemical applications(2019-01-01); - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Selective formations of antimony-dopant for highly sensitive nitrogen dioxide responsive behavior of tin oxide-based chemiresistive sensor(2025-02-15); ; ; Here, selective formation of antimony (Sb) dopant species responsible for highly sensitive gas sensors based on tin oxide (SnO<inf>2</inf>) film grown via pulsed laser deposition is presented. By elevating a forming energy through controlling substrate temperature, not only crystallinity of Sb-SnO<inf>2</inf> (ATO) is notably enhanced but the Sb<sup>5 +</sup> also predominantly replace at Sn<sup>4+</sup> site rather than Sb<sup>3+</sup> counterpart. Such Sb-species selection plays a crucial role on the density of oxygen vacancy and free electron enabling to rationally design conductive behaviour of ATO film from insulative to degenerated semiconductor. As a practical example, detection of nitrogen dioxide (NO<inf>2</inf>) gas is selected as an application model. We found a narrow window for high NO<inf>2</inf> sensing performance of ATO film which strongly corresponds with the amount of carrier density. At certain window, ATO film exhibits high NO<inf>2</inf> response of 24.65 (10 ppm) and low limit of detection of 0.5 ppm, which is 5-fold higher and 10-fold lower than that of undoped-SnO<inf>2</inf>, respectively. Our finding demonstrates a facile approach to design over the chemical state, defect, and conductivity of the active sensing layer, allowing us to achieve an excellent sensing performance of functional materials conjugated to a nano-electronic platform. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, A tunable thermal switching device based on Joule heating-induced metal-insulator transition in VO2 thin films via an external electric field(2019-01-01); ; A solid state thermal switching device can regulate carrier transport by triggering of its critical transition temperature (T<inf>c</inf>) by applied external thermal energy. Continuous control of the T<inf>c</inf> of the thermal switch by the metal-insulator transition (MIT) phenomenon makes such devices widely usable. In this research, tunable thermal switching devices were fabricated, and characterization of the MIT in VO<inf>2</inf> thin film phase transition material was studied as a function of temperature and the external applied electric field. We observed reversible abrupt changes of the electrical resistivity by approximately three orders of magnitude at T<inf>c</inf> = 62.3 °C for VO<inf>2</inf> thin film on a SiO<inf>2</inf>/Si substrate. The MIT induced by the external electric field successfully controlled the T<inf>c</inf> of the thermal switch between 60 °C and 47 °C (as a linear relationship). We found that the Joule heating effect, rather than electric field breakdown, was a dominant mechanism due to the configuration of the device. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Influence of Antimony Species on Electrical Properties of Sb-Doped Zinc Oxide Thin Films Prepared by Pulsed Laser Deposition(2023-06-01); ; ; This study systematically investigates the influence of antimony (Sb) species on the electrical properties of Sb-doped zinc oxide (SZO) thin films prepared by pulsed laser deposition in an oxygen-rich environment. The Sb species-related defects were controlled through a qualitative change in energy per atom by increasing the Sb content in the Sb<inf>2</inf>O<inf>3</inf>:ZnO-ablating target. By increasing the content of Sb<inf>2</inf>O<inf>3</inf> (wt.%) in the target, Sb<sup>3+</sup> became the dominant Sb ablation species in the plasma plume. Consequently, n-type conductivity was converted to p-type conductivity in the SZO thin films prepared using the ablating target containing 2 wt.% Sb<inf>2</inf>O<inf>3</inf>. The substituted Sb species in the Zn site (Sb<inf>Zn</inf><sup>3+</sup> and Sb<inf>Zn</inf><sup>+</sup>) were responsible for forming n-type conductivity at low-level Sb doping. On the other hand, the Sb–Zn complex defects (Sb<inf>Zn</inf>–2V<inf>Zn</inf>) contributed to the formation of p-type conductivity at high-level doping. The increase in Sb<inf>2</inf>O<inf>3</inf> content in the ablating target, leading to a qualitative change in energy per Sb ion, offers a new pathway to achieve high-performing optoelectronics using ZnO-based p–n junctions. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Electroreflectance study of antimony doped ZnO thin films grown by pulsed laser deposition(2021-10-01); ; In this research, antimony doped ZnO (SZO) thin films with various doping content have been grown on a c-Al<inf>2</inf>O<inf>3</inf> substrate by pulsed laser deposition. The effect of the applied electric field on the bandgap of SZO thin films was studied by electroreflectance (ER) spectroscopy using a capacitor-type geometry. Hall effect measurements indicate that the p-type conductivity of SZO is realized for the Sb<inf>2</inf>O<inf>3</inf> weight percentage at 2%. The blue shift of the energy bandgap was observed in thin films after increasing the doping concentration. The Burstein-Moss effect is the crucial mechanism for the blue shift of the SZO bandgap. Furthermore, we found the red shift of bandgap in all samples, which was measured under various electric fields by ER spectroscopy. The changes of the optical transition in the band structure should be the origin of the red shift behaviors of the SZO bandgap under the presence of the electric field. Based on our results, we can design and optimize the bandgap of SZO for optoelectronic devices. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Tailoring ZnO Nanostructures through Precursor Concentration and Hydrothermal Duration: A Pathway to Efficient Solar Water Splitting(2026-11-10);