Muanghlua, Rangson
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Preferred name
Muanghlua, Rangson
Alternative Name
Muanghlua, R.
Muanghlua, Rangsan
Main Affiliation
Email
rangson.mu@kmitl.ac.th
3 results
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Item type:Publication, The Effect of Gamma Irradiation on Threshold Voltage and Channel Mobility Degradation of NMOS(2018-07-02) - Some of the metrics are blocked by yourconsent settings
Item type:Publication, The effects of gamma irradiation on threshold voltage and channel mobility models of PMOS(2018-07-02); ; Ruangphanit, AnuchaThis paper presents the effects of gamma irradiation on threshold voltage and mobility models of PMOS. The devices with a gate oxide thickness of 15 nm fabricated in an 0.8-micron CMOS technology were measured and tested. The electrical properties were collected pre-irradiation and after the exposure by a<sup>60</sup>Co gamma-ray source in the dose range of 1 to 10 kGy, transient dose = 290.68 Gy/hr. The results show that the threshold voltage of big MOS at zero substrate bias (VT0) increased approximately 28%, but the low field surface mobility (UO) and the maximum transconductance parameter (K0) decreased in the same value by 7.5% and the THETA (? ) parameter decreased by 28%. All parameters caused the saturation drain current of big MOS to decrease 16%. For short channel effects, the saturation drain current decreased more. Finally, the short channel model parameter should be investigated and discussed in future. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Sensing layer combination of vertically aligned ZnO nanorods and graphene oxide for ultrahigh sensitivity IDE capacitive humidity sensor(2020-06-01);