Rangkasikorn, Adirek
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Preferred name
Rangkasikorn, Adirek
Alternative Name
Rangkasikorn, A.
Main Affiliation
Email
adirek.ra@kmitl.ac.th
10 results
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Item type:Publication, Metal Oxide Nanostructures Enhanced Microfluidic Platform for Efficient and Sensitive Immunofluorescence Detection of Dengue Virus(2023-11-01) - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Study of optical and electrical properties of tin doped cobalt-phthalocyanine thin films prepared by thermal co-evaporation(2018-09-05); ; ; The aim of this research is to study the specific properties e.g. surface morphology, optical absorption as well as electrical conductivity of tin-doped cobalt-phthalocyanine (CoPc) thin film prepared by thermal co-evaporation. The concentration of tin metal dopant is controlled via evaporation rate during film's preparation. The change of tin quantity leads to the significant changes not only in morphology but also in molecular packing of the doped films. Moreover, the dramatic increase in both carrier mobility and carrier concentration should provide the enhancement in electrical conductivity of the doped films. By controlling the specific properties of the tin-doped CoPc thin film, the increasing efficiency of optoelectronic applications based on metal-phthalocyanine could be achieved. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, A tunable thermal switching device based on Joule heating-induced metal-insulator transition in VO2 thin films via an external electric field(2019-01-01); ; A solid state thermal switching device can regulate carrier transport by triggering of its critical transition temperature (T<inf>c</inf>) by applied external thermal energy. Continuous control of the T<inf>c</inf> of the thermal switch by the metal-insulator transition (MIT) phenomenon makes such devices widely usable. In this research, tunable thermal switching devices were fabricated, and characterization of the MIT in VO<inf>2</inf> thin film phase transition material was studied as a function of temperature and the external applied electric field. We observed reversible abrupt changes of the electrical resistivity by approximately three orders of magnitude at T<inf>c</inf> = 62.3 °C for VO<inf>2</inf> thin film on a SiO<inf>2</inf>/Si substrate. The MIT induced by the external electric field successfully controlled the T<inf>c</inf> of the thermal switch between 60 °C and 47 °C (as a linear relationship). We found that the Joule heating effect, rather than electric field breakdown, was a dominant mechanism due to the configuration of the device. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Influence of Antimony Species on Electrical Properties of Sb-Doped Zinc Oxide Thin Films Prepared by Pulsed Laser Deposition(2023-06-01); ; ; This study systematically investigates the influence of antimony (Sb) species on the electrical properties of Sb-doped zinc oxide (SZO) thin films prepared by pulsed laser deposition in an oxygen-rich environment. The Sb species-related defects were controlled through a qualitative change in energy per atom by increasing the Sb content in the Sb<inf>2</inf>O<inf>3</inf>:ZnO-ablating target. By increasing the content of Sb<inf>2</inf>O<inf>3</inf> (wt.%) in the target, Sb<sup>3+</sup> became the dominant Sb ablation species in the plasma plume. Consequently, n-type conductivity was converted to p-type conductivity in the SZO thin films prepared using the ablating target containing 2 wt.% Sb<inf>2</inf>O<inf>3</inf>. The substituted Sb species in the Zn site (Sb<inf>Zn</inf><sup>3+</sup> and Sb<inf>Zn</inf><sup>+</sup>) were responsible for forming n-type conductivity at low-level Sb doping. On the other hand, the Sb–Zn complex defects (Sb<inf>Zn</inf>–2V<inf>Zn</inf>) contributed to the formation of p-type conductivity at high-level doping. The increase in Sb<inf>2</inf>O<inf>3</inf> content in the ablating target, leading to a qualitative change in energy per Sb ion, offers a new pathway to achieve high-performing optoelectronics using ZnO-based p–n junctions. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Electroreflectance study of antimony doped ZnO thin films grown by pulsed laser deposition(2021-10-01); ; In this research, antimony doped ZnO (SZO) thin films with various doping content have been grown on a c-Al<inf>2</inf>O<inf>3</inf> substrate by pulsed laser deposition. The effect of the applied electric field on the bandgap of SZO thin films was studied by electroreflectance (ER) spectroscopy using a capacitor-type geometry. Hall effect measurements indicate that the p-type conductivity of SZO is realized for the Sb<inf>2</inf>O<inf>3</inf> weight percentage at 2%. The blue shift of the energy bandgap was observed in thin films after increasing the doping concentration. The Burstein-Moss effect is the crucial mechanism for the blue shift of the SZO bandgap. Furthermore, we found the red shift of bandgap in all samples, which was measured under various electric fields by ER spectroscopy. The changes of the optical transition in the band structure should be the origin of the red shift behaviors of the SZO bandgap under the presence of the electric field. Based on our results, we can design and optimize the bandgap of SZO for optoelectronic devices. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Enhancement of sensing characteristics of Polydimethylsiloxane-based capacitive force sensor by introducing conductive polymer to dielectric layer(2021-01-01); ; ; Jessadaluk, SukittayaA capacitive force sensor is one of the electronics components used in several electronic devices and applications. An improvement of sensing characteristics of the sensor, for example sensitivity and response time, becomes an interesting research topic. The alternative approach to enhance the sensitivity and response time of polydimethylsiloxane-based capacitive force sensors is proposed by introducing poly(3,4-ethylenedioxythiophene) polystyrene sulphonate, a conductive polymer, into polydimethylsiloxane active layer. Two sensors using different active layers, (i) polydimethylsiloxane (conventional sensor) and (ii) poly(3,4-ethylenedioxythiophene) polystyrene sulphonate mixed polydimethylsiloxane (modified sensor), were fabricated and characterised to reveal the sensing enhancement. Interestingly, the modified sensor shows the significant increase in the sensitivity from 0.7 to 1.14 kPa<sup>–1</sup> (+62.86%) and the shortening response time from 1.55 to 0.43 s (−72.26%) with respect to the conventional sensor. In addition, the deterioration in elastic behaviour and the faster charge–discharge behaviour observed from the poly(3,4-ethylenedioxythiophene) polystyrene sulphonate mixed polydimethylsiloxane film indicate the better deformation and charge transport than that from polydimethylsiloxane film. Therefore, it can be concluded that the conductive poly(3,4-ethylenedioxythiophene) polystyrene sulfonate additive plays the role of mechanical and electrical modification of the polydimethylsiloxane active layer leading to the enhancement in sensitivity and response time of the polydimethylsiloxane-based capacitive force sensor. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Tailoring ZnO Nanostructures through Precursor Concentration and Hydrothermal Duration: A Pathway to Efficient Solar Water Splitting(2026-11-10); - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Growth window and metal-insulator transition behavior of VO2 thin films deposited by pulsed laser deposition for thermal switch applications(2026-05-01); ; ; Vanadium dioxide (VO<inf>2</inf>) is a strongly correlated transition metal oxide that exhibits a sharp and reversible metal-insulator transition (MIT) near room temperature, making it a promising material for thermal switching and adaptive electronic applications. In this study, VO<inf>2</inf> thin films were deposited on single-crystalline Si, thermally grown SiO<inf>2</inf>, and fused quartz substrates by pulsed laser deposition, and the influence of substrate temperature and oxygen partial pressure on phase formation, structural properties, and MIT behavior was systematically investigated. By optimizing deposition conditions within a narrow oxygen pressure window, phase-pure monoclinic VO<inf>2</inf>(M) thin films with high crystalline quality were achieved while suppressing the formation of over-oxidized vanadium oxide phases. Structural and chemical analyses using X-ray diffraction, Raman spectroscopy, and X-ray photoelectron spectroscopy confirmed the stabilization of the V4+ oxidation state and uniform film stoichiometry. Temperature-dependent electrical measurements revealed a pronounced and reproducible MIT characterized by an abrupt change in resistance and a clear thermal hysteresis. In-situ temperature-dependent X-ray diffraction further demonstrated a direct correlation between the monoclinic-rutile structural transformation and the electronic transition. Importantly, the MIT behavior was consistently observed across all investigated substrates, indicating robust film growth and substrate tolerance. These results provide insight into the structure-property relationships governing VO<inf>2</inf> thin films and highlight their potential for integration into thermal switch and thermally adaptive device architectures. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Systematic investigations on morphological properties of aluminum-doped zinc oxide transparent electrode prepared from pulsed laser deposition and its electrochromic application(2023-03-01); - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Gold nanoparticles decorated zinc oxide nanorods as electrodes for a highly sensitive non-enzymatic electrochemical glucose detection(2019-01-01);