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Improving the forward current of P-N diode using soft X-ray annealing method
(2013-12-31)
Ueamanapong, Surada
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Srithanachai, Itsara
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Suwanchatree, Ai Lada
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Niemcharoen, Surasak
;
Klunngien, Nipapan
This paper presents a new result to improve the performance of P-N diode. The P-N diodes are fabrication using CMOS technology at TMEC. Electrical characteristics of P-N junction diode can be analyzed by current-voltage (I-V) measurement. This paper investigates X-ray irradiation by its electrical characteristics of difference X-ray exposure time. The X-ray energy use to expose 55 and 70 keV various time in the range 5-205 sec of exposure. After X-ray irradiation the forward current are increased about 3-4 orders. The series resistance and recombination lifetime are main factor for describe the change of forward current. Series resistance after X-ray irradiation with 55 and 70 keV are decreased from 10 k to 5, which show that the device performance of diode are increased after X-ray irradiation. While the recombination lifetime are decreased from 55 to 48 μsec and 52 to 45 μsec at 55 and 70 keV, respectively. From the results show that soft X-ray annealing is very important to semiconductor industry. © 2013 IEEE.
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Light-response characteristics of platinum doped silicon photodetector
(2013-11-04)
Nararug, Budsara
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Ueamanapong, Surada
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Srithanachai, Itsara
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Janprapha, Supakorn
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Suwanchatree, Ai Lada
The purposeof this research article is present electrical characteristic of Pt-doped silicon photodetector compare with undoped silicon photodetector. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Pt-doped detector were investigated. In this experiment, the results of Pt-doped detector show that the dark currentisobviously decreased and the photocurrent is decreased about 9 to 10 orders. Furthermore, the capacitance characteristic isslightly increased about 0.15 pF. The effects platinum on silicon indicated the carrier in silicon have been changed. © (2013) Trans Tech Publications, Switzerland.
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Enhanced silicon bandgap by platinum diffusion for UV detector
(2013-03-01)
Ueamanapong, Surada
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Srithanachai, Itsara
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Atiwongsangtong, Narin
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Klunngien, Nipapan
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Poyai, Amporn
This research article proposes a new method that enables silicon to respond to light in the UV wavelength range by doping Platinum (Pt), which is an impurity atom, into silicon. It is widely recognized that silicon semiconductor can respond to visible light. Silicon photodetector can thus detect merely the light with wavelengths of visible light and near IR. The effect of Pt on photocurrent of a metal-semiconductor-metal (MSM) photodetector was investigated. The undoped and Pt-doped silicon photodetectors in this experiment were fabricated to test the current characteristics. It was found that Pt-doped photodetectors can respond to the light wavelength of 365 nm. The energy bandgap (E<inf>g</inf>), a parameter related to the optical response of semiconductor, of Pt-doped silicon was obtained by extracting from Arrhenius plot of generation current of silicon p-n junction. The result was shown that E<inf>g</inf> of Pt-doped silicon is increased with the introduction of Pt. E<inf>g</inf> of silicon is typically 1.12 eV; however, the E<inf>g</inf> in this study is approximated at 1.7 eV. © 2013 American Scientific Publishers All rights reserved.
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Temperature dependence of electrical characteristics on pn junction power diodes irradiated by X-ray
(2012-10-02)
Sundarasaradula, Yuwadee
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Sodhgam, Piyachat
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Amporn
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Poyai
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Klunngien, Nipapan
The purpose of this work is to study the effect of X-ray irradiation on pn junction power diode. The diodes were designed and fabricated using standard CMOS technology. Irradiation with exposure energy of 70 keV and various exposure times (5, 55, and 205 seconds) were applied on the diodes. The temperature dependence of the current-voltage (I-V) characteristics of the diodes was measured in the temperature range of 303K-393K. The effect on forward and reverse current can be explained through the following parameters such as saturation current (I <inf>o</inf>), series resistance (R <inf>s</inf>), and ideality factor (n). After irradiation the forward current was approximately three orders of magnitude higher than non-X-ray samples of all temperature conditions. This caused by the decreasing of the total series resistance. The increase in the values of I <inf>o</inf> with increasing temperature was observed. The value of n is essentially the same, close to 1, before X-ray and after X-ray of all temperature range of 303K-393K. © 2012 IEEE.
1
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Effect of base width and implantation dose on performance of 3-terminal magnetotransistor
(2007-12-01)
Woradet, Jaroenmit
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Phetchakul, Toempong
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Chareankid, Sompong
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Pengchan, Weera
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Klunngien, Nipapan
This paper presents the effect of base width and implantation dose on electrical carriers in the magnetotransistor deflected by the Lorentz force (F<inf>L</inf>) from magnetic field. The structure of magnetotransistor is designed like a structure of a PNP bipolar junction transistor which comprises of 3 terminals, i.e., emitter, collector and base. The base width (L) is varied (10, 20 and 30 μm) where the spacing between collector and base is fixed at 40 μm. The emitter and collector regions are doped with boron (BF <inf>2</inf>) at the dose of 3×1015, 5×1015 and 1×1016 ions/cm2. It is found that the sensitivity is increased when increasing L and the implantation dose. It is also demonstrated that the linear relationship between the output voltage of the magnetotransistor circuit and magnetic field can be obtained. © 2007 IEEE.
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