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Contributing parameters for magnetoresistance effect of the new design on Hall plate structure
(2013-09-02)
Phetchakul, T.
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Taisettavatkul, P.
;
Yamwong, W.
;
Poyai, A.
This paper presents the parameters which contribute magnetoresistance effect of the new design on Hall plate structure when it is compared with series resistance structure. The new design is designed with rectangular aluminum ring surrounding on Hall plate. It creates zero Hall voltage area which the carriers move and deflect freely. The new and classical designs have percentage of magnetoresistance effect about 20% at doping concentration 2×10 15cm-3, temperature 300K at magnetic field 3 Tesla when classical one has metal space about 10 μm. The new design one is easier design than the classical series resistance and has no effect of metal space. Parameters which are used in this experiment are silicon and gallium arsenide at doping concentration 2×1014, 2×1015 and 2×1016 at temperature 200, 250 and 300K with Sentaurus TCAD program for simulation. The new design has the percentage of magnetoresistance effect much higher up to 906% over than the classical series resistance when it is designed with high mobility material, low doping concentration and low temperature. © 2013 IEEE.
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The new design for magnetoresistance effect on hall plate structure
(2012-10-02)
Phetchakul, T.
;
Taisettavatkul, P.
;
Pengchan, W.
;
Yamwong, W.
;
Poyai, A.
This paper presents the new design which contributes to magnetoresistance effect on Hall plate by compared with series resistance structure by Sentaurus TCAD program. A new design creates zero Hall voltage area which the carriers move and deflect freely. The Hall plate structure is n-type silicon with 400 μm length, 100 μm width and 1 μm thickness. Both designs have percentage of magnetoresistance effect about 20% at doping concentration 2×10 15cm -3, temperature 300K at magnetic field 3 Tesla. A new design on Hall plate structure is easier than the classical series resistance and has no effect of metal space which is in series resistance structure. © 2012 IEEE.
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The mechanism of dual schottky magnetodiode
(2012-10-02)
Phetchakul, T.
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Luanatikomkul, W.
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Yamwong, W.
;
Poyai, A.
This paper presents the mechanism of dual schottky magnetodiode. The device can operate both in forward and reverse biasing for magnetic field sensor. Two modes of operation show linearity which electron is only type of carrier. In forward bias, the deflected electrons in n-type semiconductor cathode are injected to metal anode. In reverse bias, the electrons from metal anode are injected and continuously deflected in n-type semiconductor cathode. Comparison of two modes at the same current shows the same sensitivity. © 2012 IEEE.
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The study of forward and reverse schottky junction for dual magnetodiode
(2012-06-01)
Phetchakul, T.
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Luanatikomkul, W.
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Yamwong, W.
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Poyai, A.
This paper presents schottky diode for sensing magnetic field. The structure is the same as dual magnetodiode that had been reported by the same group. The device can operate both in forward and reverse biasing for magnetic field device. The sensitivity (ΔV <inf>o</inf>/ΔB) by simulation of forward bias is 0.8 mV/T at the current 1.93 μA and reverse bias is 6 nV/T at the current 13.49 pA. Two modes of operation show linearity which electron is the only type of carrier. The mechanism of forward and reverse modes of operation are described. © 2012 IEEE.
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Nanocrystal-ZnO thin film deposition by a novel reactive gas-timing RF magnetron sputtering provided for UV photodetectors
(2010-02-05)
Panprom, P.
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Porntheeraphat, S.
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Bunjongpru, W.
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Tiwawong, T.
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Yamwong, W.
The fabrication and characterizations of nanocrystal-ZnO thin film used as active layer of MSM-photodetector structure are reported. The ZnO thin film were successfully sputtered on SiO<inf>2</inf>/Si substrates without heating or annealing processes by using a novel reactive gas-timing technique. In our experiment, the ZnO thin film properties with different gas-timing ratio of Ar/O<inf>2</inf> were investigated. For fabricating of UV detector, the Al interdigitate electrode was deposited on SiO<inf>2</inf>/Si substrate by DC sputtering process and ZnO thin film was deposited as active layer. The response wavelength peak occurs at around 380 nm corresponding to ZnO energy bandgap of 3.2 eV .The I-V measurements indicates the Schottky behavior of ZnO on Al contact. © (2010) Trans Tech Publications.
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Comparison of conventional and LDD NMOSFETs hot-carrier degradation in 0.8 μm CMOS technology
(2008-10-06)
Phongphanchantra, N.
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Ruangphanit, A.
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Klunngien, N.
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Yamwong, W.
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Niemcharoen, S.
Hot-carrier degradation phenomena in n-channel MOSFETs (NMOSFETs) through the comparison between conventional and lightly doped drain (LDD) structure of 0.8-μm CMOS technology was described. This phenomenon was also observed in the conventional NMOSFETs. This is because of hot-electron trap in the gate accumulating carriers (holes) along the channel region near the drain. That is, these holes effectively increased the effective channel length. On the other hand, the lifetimes of conventional and LDD NMOSFETs defined as how long It takes the transconductance deviation to reach 10 %, which the LDD NMOSFETs are longer than conventional NMOSFETs under the same hot-carrier condition. © 2008 IEEE.

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